Monday  October 4, 2004   

1. Symposium Keynote Session: SiGe HBTs and CMOS

Session Chair: David Harame

   

(1.0)  10:00 –  10:10  AM  - Welcome, David Harame

(1.1)10:10 – 11:00 AM  - Using SiGe HBTs for Mixed-Signal Circuits p. 3

and  Systems: Opportunities and Challenges (Invited), John Cressler

(Georgia Tech.)

(1.2)11:00–11:50 AM – Enhanced Mobility CMOS (Invited), p. 15

Judy L. Hoyt (MIT)

Lunch  Break 11:50 AM – 1:05 PM     

2. Advanced SiGe HBT Technologies and Optimization Issues

Session Chair: Mickael Ostling

Session Co-Chair: Katsuyoshi Washio 

(2.1) 1:05 – 1:35 PM - Complementary SiGe BiCMOS (Invited),p. 25

B. Heinemann, J. Drews, D. Knoll,  R. Kurps, S. Marschmeyer, H. Rücker, 

W. Winkler,  and Y. Yamamoto (IHP)

(2.2) 1:35 – 2:05 PM - 0.13µm SiGeC BiCMOS Technology (Invited),   p. 33              

A. Chantre, M. Laurens, P. Chevalier,  A. Monroy, F. Deléglise, C. Fellous,

L. Rubaldo, and D. Dutartre (ST Microelectronics)

(2.3) 2:05 – 2.25 PM - Device Performance Considerations of NPN HBTs p. 37

due to Elevated Oxygen in Sub-50nm SiGe and SiGeC Base Layers Grown

by LPCVD, D. Enicks and G. Oleszek (ATMEL)

(2.4) 2:25 – 2.45 PM - Emitter-Base Design Tradeoffs in 120GHz SiGe p. 45

HBTs, A. Joseph, X. Liu, P. Geiss, M. Slusser,  W. Hodge, M. Dupuis,

R. Wuthrich, J. Nakos, and J. Dunn (IBM)

(2.5) 2:45 – 3:05 PM - Enhanced 5V Complementary SiGe BiCMOS p. 53

Technology by Separate NPN/PNP Emitter Formation, B. El-Kareh,

S. Balster, P. Steinmann,  H. Yasuda, W. Nehrer, J. Cressler, E. Zhao, F. Hou, C.Dirnecker, M. Garbe,  A. Haeusler, P. Menz,  T. Scharnagl, M. Schiekofer,

M. Waitschull, H. Schwekendiek, J.W. Weijtmans, and C. Willis, (Texas Instruments)

Coffee Break 3:05 – 3:20 PM

3. FET I 

Session Chair:Judy Hoyt

Session Co-ChairPhilippe Coronel

       

(3.1) 3:20 - 3:50 PM - Strained-Si/SiGe-on-Insulator CMOS Technology as a p. 61

Platform of Device Performance Boosters (Invited), S. Takagi, T. Mizuno,

T Tezuka, N. Sugiyama, T. Numata, K. Usuda,   Y. Moriyama, S. Nakaharai,

J. Koga, A. Tanabe, N. Hirashita,  T. Irisawa, and T. Maeda (MIRAI-AIST)

(3.2) 3.50 – 4:20 PM - Application of Selective SiGe Epitaxy for Recessed p. 77

Source/Drain of PMOS Transistor (Invited), Y. Kim, A. Samoilov,

L. Washington, A. Lam, N. Dalida, M. Kawaguchi, and M. Shen

(Applied Materials)

(3.3) 4:20 – 4:40 PM – Strained Ge MOSFET Technology, M. L. Lee, p. 89

A. Ritenour, D. Antoniadis, and E. A. Fitzgerald  (MIT)

(3.4) 4:40 – 5:00 PM - Extraction of Band Offsets in Strained Si/p. 99

Strained Si1-yGey on Relaxed Si1-xGex Dual-Channel Enhanced Mobility

Structures,  C. Ní Chléirigh, C. Jungemann, Jongwan Jung, O. O. Olubuyide,

and J.L. Hoyt  (MIT)

(3.5) 5:00 – 5:20 PM - Mobility Enhancement in Compressively Strainedp. 111

SiGe Surface Channel pMOS(FET) with HfO2/TiN Gate Stack, B. Jin,

S. Datta, G. Dewey, M. Doczy, B.S. Doyle, K. Johnson, J. Kavalieros, M.  Metz,

N. Zelick, and R. Chau (Intel)

(3.6) 5:20 - 5:40 PM - Epitaxially Strained SiGe Process to Improve p. 123

Mobility in the PMOS Transistor, P. Chidambaram, B. Smith, L. Hall,

H. Bu, S. Chakravarthi, Y. Kim, A. Samoilov, A. Kim, P. Jones, R. Irwin,

M. Kim, C. Machala and D. Grider (Texas Instruments)

Dinner Break 5:40 – 7:25 PM  

4. Short Presentations

Session Chair:    John Cressler

Session Co-Chair:Hiroshi Iwai

   

(4.1) 7:25 – 7:28 PM - HRXRD Analysis of SiGeC Layers for BiCMOS p. 135

Applications, E. Haralson, A. Sibaja-Hernandez, M. Xu, G. Malm,

H. Radamson, and M. Östling (KTH)

(4.2) 7:28 – 7:31 PM - Thickness Dependent Growth Kinetics in Ni-p. 143

Mediated Crystallization of a-SiGe on Insulator, T. Sadoh, H. Kanno,

O. Nakano, A. Kenjo, and M. Miyao  (Kyushu University) 

(4.3) 7:31 – 7:34 PM - Multitechnique Characterization of Sandwiched p. 149

Si/SiGe/Si Heterostructures, Z .C. Feng, T. R. Yang, R. P. G. Karunasiri,

W. Lu, and W. E. Collins (National Taiwan University)

(4.4) 7:34 – 7:37 PM - Diffusion of Ion-Implanted Boron in High Ge p. 159

Content SiGe Alloys, S. Uppal, A. F. W. Willoughby, and J. M. Bonar

(Univ. of Southampton)

(4.5) 7:37 – 7:40 PM - Ge-MIS Structures by Direct Nitridation of Ge,p. 167

T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi

(MIRAI-AIST)

(4.6) 7:40 – 7:43 PM – Analysis of Steam Oxidation of Crystalline Si1-xGe,p. 175

using AFM and CABOOM,  K. Fobelets, A. Alaudeen, M.M. Ahmad,

S. Clowes, and J. Zhang (Imperial College, London)

(4.7) 7:43 – 7:46 PM - Calibration for the Monte Carlo Simulation of Ion p. 181

Implantation in Relaxed SiGe, R. Wittmann, A. Hössinger, and S. Selberherr

(TU Vienna)

(4.8) 7:46 – 7:49 PM -  Boron Diffusion and Activation in Polycrystalline p. 193

Si1-x Gex Films for CMOS Gate Electrodes,  T. Sulima, J. Schulze, U. Abelein,

A. Ludsteck, and I. Eisele  (University of the German Federal Armed Forces, Munich) 

(4.9) 7:49 – 7:52 PM - Growth of SiGeC Layers by GSMBE and its p. 203

Characterization by X-ray Techniques, J. Zhang, J. H. Neave, X. B. Li,

and P. F. Fewster (Imperial College London)

(4.10) 7:52 – 7:55 P - Temperature Control Studies for LPCVD of p. 215

Complex In-Situ Doped Sub-50nm SiGe and SiGeC Base Films in

NPN HBTs, D. Enicks and G. Oleszek (ATMEL)

(4.11) 7:55 – 7:58 PM - Hydrogen Gettering Structures for Improved p. 227

Germanium Layer Exfoliation Processes,  A. Pitera and E. Fitzgerald (MIT)

(4.12) 7:58 – 8:01 PM - SIMS Depth Profiling of B and As Implants  in p. 239

Si1-xGex and Strained Si/Si1-xGex , J. Bennett, P. Kohli, R. Wise, M. Rodder,

S. Yu, R. Cleavelin, M. Pas, G. Braithwaite, M.T. Currie, and A. Lochtefeld (SEMATECH)

(4.13)8:01 – 8:04 PM - Sidewall Protection by Nitrogen in Anisotropic p. 243

Etching of P-doped Poly- Si1-xGex ,H.-S. Cho, S. Takehiro, M. Sakuraba, and

J. Murota (Tohoku University)

(4.14)8:04 – 8:07 PM - Silicon Nanowhiskers Grown on <111> Si p. 251

Substrates by Molecular Beam Epitaxy, P. Werner, L. Schubert,

N. D. Zakharov, G. Gerth, F. M. Kolb, and U. Gösele (MPI)

(4.15) 8:07 – 8:10 PM - Electrical Properties of B-doped Polycrystalline p. 261

Si1-x-yGexCy  Film Deposited by Ultraclean Low-pressure CVD, H. Shim,

M. Sakuraba, and J. Murota (Tohoku University)

(4.16)8:10 – 8:13 PM - Carbon and Boron in Heavily Doped SiGe:C/p. 269

Si Epilayers Studied by FTIR, V.D. Akhmetov, O. Lysytskiy, Y. Yamamoto, 

and H. Richter (IHP)

(4.17) 8:13 – 8:16 PM - Growth of Relaxed Si1-xGex by Using Oxidation p. 279

of Si1-xGex  B. G. Min, K. S. Jeon, Y. H. Pae,  D.-H. Ko, M.–H. Cho,

and T.–W. Lee (Yonsei Univ.)

(4.18) 8:16 – 8:19 PM - Enhancement of SiGe Relaxation for Fabrication p. 281

of SGOI Substrates Using Condensation, M. Sadaka, A. Thean, A. Barr,

T. White,V. Vartanian,M. Zavala, B-Y. Nguyen, Q. Xie, R. Liu, X-D. Wang,

M.Kottke, and S. Zollner (Freescale)

(4.19) 8:19 – 8:22  PM -  Nanostructures and Optical Properties of Ge p. 2899

Self-Assembled Quantum Dots with Hot Wall UHV/CVD, P. S. Chen,

Z. Pei, S. W. Lee, M. -J. Tsai, and C.W. Liu (ITRI)

(4.20) 8:22 – 8:25 PM - Modification of Optical Properties of Si1-XGeX /p. 299

p-Si<100> MQWs Grown by LPCVD for Photonic Applications,

M. R. Hashim, Kifah. Q. Salih, D. Bagnell, and P. Iamraksa

(Universiti Sains Malaysia)

(4.21) 8:25 – 8:28 PM - Extended Defect states in Ge Quantum Dots p. 305

and GeSi Quantum Wells, H. Y. Cho, C. J. Park, D. Y. Kim, T. W. Kang,

F. Liu, and K. L. Wang (Dongguk University)

(4.22) 8:28 – 8:31 PM - Quantification of Ge and B in SiGe using p. 309

Secondary Ion Mass Spectrometry, H.-Ulrich Ehrke and H. Maul

(FEI Company)

(4.23) 8:31 – 8:34 PM - Anomalous Behaviour of Buried Strained-Si p. 313

Channel Heterojunction FETs at Low Temperatures V. Gaspari, K. Fobelets,

J. E. Velazquez-Perez, T.  Hackbarth, and U. König (Imperial College, London)

(4.24) 8:34 – 8:37 PM - Dispersion in SiGe Devices Revealed byp. 319

Fast Pulsed Measurements, P. H. Ladbrooke, J. P. Bridge, and

N. Goodship (Accent Optical Technologies)

(4.25) 8:37 – 8:40 PM - Low Frequency Noise Mechanisms in Si and p. 327

Pseudomorphic SiGe p-Channel Field-Effect Transistors, M. J. Prest ,

D. J. F. Fulgoni, A. R. Bacon, T. J. Grasby, E. H. C. Parker, and T. E. Whall

(U. Warwick)

(4.26) 8:40 – 8:43 PM – Process Integration  of a New Method for Formation p. 335

of Shallow Junctions in MOSFET Structures using Recessed and Selectively

Regrown Si1-XGeX , C. Isheden, H. H. Radamson, P.-E. Hellström, and

M. Östling (KTH)

(4.27) 8:43 – 8:46 PM - Titanium Dioxide Gate Dielectric for Strained-p. 341

Germanium Heterolayers, S. Chakraborty, S. Das, M. K. Bera, and

C. K. Maiti (Indian Institute of Technology)

(4.28) 8:46 – 8:49 PM - Tri-layer Heterostructure for Improved PMOS p. 351

Enhancements Preserved Over a Large Processing Temperature Range,

S. Gupta, M. L. Lee, G. Taraschi, A. Pitera, and E. A. Fitzgerald (MIT)

(4.29) 8:49 – 8:52 PM - Strained Si1-xCx Field Effect Transistor on SiGe p. 363

Substrate S. T. Chang, M.-H. Lee, S. C. Lu, and C. W. Liu (ITRI)

(4.30) 8:52 – 8:55 PM - Hf Noise Improvement of SiGeC HBTs by p. 375

Base Doping Optimization, J. Kraft, B. Löffler, G. Röhrer, G. Meinhardt,

W. Pflanzl, H. Enichlmair, W. Niko, Z. Huszka, and E. Wachmann

(Austriamicrosystems AG)

(4.31) 8:55 – 8:58 PM - VBIC Model Application and Model Parameter p. 385

Optimization for SiGe HBT, S.-H. Lee, J.-Y. Lee, S.-Y. Lee, C. W. Park, 

H.-C. Bae, and J.-Y. Kang (ETRI)

(4.32) 8:58 – 9:01 PM - Fully Pseudomorphic Si/SiGe/Si Schottky p. 395

Source-Drain pMOSFET, M. J. Prest, T. J. Grasby, E .H. C. Parker, T. E. Whall

(U. Warwick)

Tuesday October 5, 2004   

5. SiGe HBT Circuit Applications and Device Issues

Session Chair: Alain Chantre

Session Co-Chair: Dieter Knoll

(5.0) 8:00 – 8:10AM - Welcome

(5.1) 8:10 - 8:40 AM - RF Analog Application for Low Voltagep. 397

SiGe BiCMOS Technologies (Invited), M. Thiel, X. Xing, (R. Bosch GmbH)

(5.2) 8:40 – 9:10 AM - SiGe HBT Circuit Applications (Invited), p. 405

M. Wurzer, T. F. Meister, H. Knapp, J. Böck, W. Perndl, H. Schäfer,

W. Bakalski, K. Aufinger, M. Rest, R. Stengl, S. Boguth, R. Schreiter, and

W. Simbürger (Infineon )

(5.3) 9:10 - 9:40 AM - Correlation Between SiGe HBT Doping Profile p. 417

and Operation Configuration (Invited), Z. Ma, N. Jiang, G. Wang

(U.WI-Madison)

(5.4) 9:40 - 10:00 AM - RF Pulse I-V Based Avalanche Measurement p. 429

in High Speed SiGe HBTs, J. Pan, G. Niu, D. Sheridan (Auburn, IBM)

(5.5) 10:00 – 10:20 AM - BiCMOS Devices Under Mechanical Strain, p. 437

C. W. Liu, S. Maikap, M. H. Liao, F. Yuan, and M. H. Lee (NTU)

Coffee Break 10:20 -10:35AM  

6. Regular FET

Session Chair: Kristin De Meyer

Session Co-Chair:    Tahir Ghani

   

(6.1) 10:35 - 11:05 AM - SiGe MODFETs: Overview and Issues for Sub-100p. 449

nm Gate-Length Scaling (Invited), S. J. Koester, J. O. Chu, K. L. Saenger,

Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello,  and C. V. Jahnes (IBM)

(6.2) 11:05 – 11:35 AM - Strain Relaxation in Narrow Width Strained p. 459

Silicon Devices with Poly and Metal Gates (Invited), Z. Krivokapic, V. Moroz,

L. Smith,  Q. Xiang, and M. R. Lin (AMD)

(6.3) 11:35 – 11:55 AM - Schottky Barrier Height Engineering with a p. 471

Strained-Si channel for Sub-50nm Gate Schottky Source/Drain MOSFETs

K. Ikeda, Y. Yamashita, A. Endoh, K. Hikosaka, and T. Mimura (Fujitsu)

(6.4) 11:55 - 12:15 PM - Ge Diffusion Effect on Low Frequency Noise in p. 483

Ultra-thin Strained-SOI CMOS  A. Tanabe, T. Numata, T. Mizuno, T. Maeda,

and S. Takagi (MIRAI)

(6.5) 12:15 – 12:35 PM - Design, Fabrication and Operation of Sub-65nm p. 493

Strained-Si/Si1-xGex MOSFETS  A. V-Y Thean, M. Sadaka, T. White, A. Barr,

Z-H Shi, D. Zhang, V. Vartanian, S. G. Thomas, Q-H, Xie, X-D Wang,  J. Jiang,

R. Liu,  M. Zavala, D. Eades, B-Y Nguyen, B.E. White, and J. Mogab  (Freescale)

Lunch Break 12:35 – 1:50 PM 

7.  Regular Opto "Future Directions in Optoelectronics"

Session Chair: Dan-Xia Xu

Session Co-Chair:Hartmut Presting

   

(7.1) 1:50 – 2:20 PM - Light Generation, Amplification, Wavelength p. 501

Conversion, and 3-D Photonic Integration in Silicon (Invited), B. Jalali,

R. Claps, P. Koonath, V. Raghunathan, D. Dimitropoulos, and T. Indukuri

(UCLA)

(7.2) 2:20 – 2:50 PM - Quasi-Monosized Silicon Quantum Dot Arrays p. 513

for Optical Applications: Quantum Confinement and Doping (Invited),

M. Zacharias (MPI)

(7.3) 2:50 – 3:20 PM - Photonics, Electronics, and Silicon-Germanium: p. 527

A Possible Convergence? (Invited), O. Kermarrec, Y. Campidelli, and

D. Bensahel (STMicroelectronics)

(7.4) 3:20 – 3:50 PM - Optoelectronic Substrates by SiGen NanoTec™ - p. 543

A General Layer-Transfer (LT) Approach (Invited), I. J. Malik,

A. J. Lamm, J. Sullivan, S. Kang, D. Jacy, H. Kirk, P. J. Ong, and F. J. Henley

(Silicon Genesis)

Coffee Break 3:50 -4:05 PM 

8. Regular Epitaxy "SiGe Epitaxy-Growth"

Session Chair:Bernd Tillack

Session Co-Chair:    Wiebe B. de Boer   

(8.1) 4:05 – 4:35 PM - Group-IV Semiconductor Materials Engineering p. 555

for Advanced Device Technology (Invited), Y. Yasuda, A. Sakai,

O. Nakatsuka, and S. Zaima (Nagoya University)

(8.2) 4:35 – 4:55 PM - A Hydrogen Pre-bake Process for Si Epitaxy on p. 569

SiGe Surface  H. Chen, S. W. Bedell, R. J. Murphy, D. M. Mocuta,

A. R. Turansky,  A. G. Domenicucci, and D. K. Sadana (IBM)

(8.3) 4:55 – 5:15 PM - Low Temperature SiGe Process for Defect-Free p. 581

Epitaxy and Smooth Morphology,  L. G. Yao, K. C. Lee, S. C. Chen, and

M. S. Liang  (TSMC)

(8.4) 5:15 – 5:35 PM - A Novel, High Quality SiGe Graded Buffer p. 589

Growth Process Using GeCl4 R. Westhoff, J. Carlin, M. Erdtmann, 

T. Langdo, C. Leitz, V. Y.,  K. Petrocelli, M. Bulsara, E.A. Fitzgerald, and

C. Vineis (AmberWave Systems Corp)

(8.5) 5:35 – 5:55 PM - Investigation of Facet Formation in RTCVD p. 601

Si/SiGe Selective Epitaxy A. Talbot, J. Arcamone, C. Fellous, F. Deleglise,

and D. Dutartre (STMicroelectronics)

(8.6) 5:55 – 6:15 PM Strained-Silcon / Silicon- Germanium-on-Insulator          p. 607

for High Peformance CMOS – A Manufacturable Process for 300 MM

Substrates A. Reznicek, S. W. Bedell, H. J. Hovel, K. E. Fogel, J. A. Ott,  

R. M. Mitchell, and D. K. Sadana  (IBM)

Dinner Break

Wednesday October 6, 2004   

9. Optoelectronic Components

Session Chair: Bahram Jalali

Session Co-Chair: Noritaka Usami

   

(9.0) 10:00 -10:10 AM - Welcome   

(9.1) 10:10 – 10:40 AM - Prospects and Challenges for Microphotonic p. 619

Waveguide Components Based on Si and SiGe (Invited) D.-X. Xu, J.-M.

Baribeau, P. Cheben, S. Janz, and W. N. Ye (National Research Council Canada)

(9.2) 10:40 – 11:10 AM - Si-Based Near-Infrared Detection and Emission: p. 635

Highlights From the (Uncompleted) Trail Towards Monolithic Integration

with CMOS (Invited) G. Masini, L. Colace, and G. Assanto (NOOEL)

(9.3) 11:10 – 11:40 AM - Novel Concepts in Thin Film Solar Cells (Invited), p. 651

H. Presting, J. Konle, G. Palfinger, H. Kibbel, U. König, P. Uebele, and G. Strobl

(Daimler Chrysler)

(9.4) 11:40 - 12:00 PM - High Ge Content Si / SiGe Heterostructures forp. 665 Microelectronics and Optoelectronics Purposes Y. Bogumilowicz,

J.M. Hartmann, J.F. Damlencourt, B. Vandelle, A. Abbadie, A.-M. Papon,

G. Rolland, P. Holliger, C. Di Nardo, P. Besson, T. Ernst and T. Billon

(CEA-LETI)

Lunch Break 12:00 -1:15 PM

10. FET

Session Chair:Shin-ichi Takagi

Co-Chair:     Steve Koester

(10.1) 1:15 – 1:45 PM - Uniaxial Strained Silicon CMOS Devices for Highp. 681 Performance Logic Nanotechnology (Invited), T. Ghani, M. Armstrong,

C. Auth, M. Giles, K. Mistry, A. Murthy, S. Thompson, and M. Bohr (Intel)

(10.2) 1:45 – 2:15 PM -  Germanium Deep-sub micron PMOS Transistors p. 693

with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a

200mm Prototyping Line (Invited) M. Meuris B. De Jaeger, S.Kubicek, P.Verheyena,  J.Van Steenbergen, G.Lujan, E.Kunnen,  E.Sleeckx, I.Teerlinck,  S.Van Elshocht, A.Delabie, R.Lindsay, A.Satta, T.Schram, T. Chiarella, R.Degraeve, O.Richard, T.Conard, J.Poortmans, G.Winderickx, M. Houssa, W.Boullart, M.Schaekers, P.W.Mertens,  M.Caymax, S. De Gendt, W.Vandervorst, E.Van Moorhem, S.Biesemans, K.De Meyer, L.Ragnarsson, S.Lee, G.Kota, G.Raskin, P.Mijlemans, V.Afanas’ev, A.Stesmans, M.Heyns (IMEC, Lam Research, Umicore, KU Leuven)

(10.3) 2:15 – 2:35 PM - 3D Integration of Ultimate Devices Thanks to SiGe p. 701

P. Coronel, S. Harrison, R. Cerutti, S. Monfray and T. Skotnicki 

(ST Microelectronics, L2MP)

(10.4) 2:35 – 2:55 PM - SiGe-based Combined MBE and CVD Processing p. 719

for Vertical “Silicon-on-Nothing” (SON) Device Technology J. Schulze,

I. Eisele, P.E. Thompson, G. Jernigan, N. Bassim and T. Suligoj (University of

the German Federal Armed Forces Munich, US Naval Research Laboratory,

University of Zagreb)

Coffee Break 2:55 – 3:10PM

11. Regular Strain Layer Transfer

Session Chair:Mayank Bulsara

Co-Chair:    Steve Koester

   

(11.1) 3:10 – 3:40 PM - Strained Silicon on Relaxed SiGe Made by Ion p. 731

Implantation and Strain Transfer (Invited),  S. Mantl, D. M. Buca,

B. Holländer,  M. Mörschbächer, H. Trinkaus, M. Luysberg, N. Hueging,

L. Houben,R. Carius, R. Loo, M. Caymax, and H. Schäfer (ISG1-IT)

(11.2) 3:40 – 4:00 PM - Formation Mechanism of Ge-on-Insulator Layers p. 741

by Ge-condensation Technique S. Nakaharai, T. Tezuka, N. Sugiyama,

and S. Takagi (MIRAI ASET)

(11.3) 4:00 – 4:20 PM - Strained Silicon on Silicon by Wafer Bonding p. 749

and Layer Transfer from Relaxed SiGe Buffer D. M. Isaacson, G. Taraschi,

A. J. Pitera, N. Ariel, and E. A. Fitzgerald (MIT)

(11.4) 4:20 – 4:40 PM - Strained Silicon on Insulator (sSOI) by Wafer p. 759

Bonding S. Christiansen , M. Reiche, I. Radu, R. Singh,

U. Gösele, D. Webb, and S. Mantl (Max Planck Institute of Microstructure Physics)

(11.5) 4:40 – 5:00 PM - Ge & Ge+B Infusion Doping and Deposition for p. 769

Ultra-shallow Junction, Blanket and Localized SiGe or Ge Formation on Cz

and SOI Wafers J. Borland, J. Hautala, M. Tabat, M. Gwinn, T. Tetreault, and W. Skinner  (J.O.B. Technologies)

Dinner Break 5:00 – 6:45 PM 

12. Workshop Epitaxy Workshop

Session Chair:Derek Houghton

Co-Chair: Jean-Michel Hartmann

(12.1) 6:45 – 7:05 PM - Outlook and Opportunities for Hetero-epitaxy in Sip. 785

CMOS Technology and Beyond, S. Koester (IBM)

(12.2) 7:05 – 7:25 PM - Low-temperature CVD of Epitaxial Si and SiGe: p. 789  Room for Improvement, W. B. de Boer (Philips – Fishkill)

(12.3) 7:25 – 7:45 PM - Atomic Level Control of SiGe Epitaxy and p. 803

Doping, B. Tillack, Y. Yamamoto, and J. Murota (IHP, Tohoku University)

(12.4) 7:45 – 8:05 PM - Selective Epitaxy of Si and SiGe for Advanced p. 815

Applications: Possibilities and Limitations,  M. Caymax and R. Loo (IMEC)

(12.5) 8:05 – 8:35 PM - Low-Temperature SiGe(C) Epitaxial Growth by p. 825

Ultraclean Hot-Wall Low-Pressure CVD (Invited), J. Murota and M. Sakuraba

(Tohoku University)

(12.6) 8:35 – 8:55 PM – Advanced Epitaxy by RTCVD D. Dutartre, p. 837

A. Talbot, C. Fellous, F. Deléglise, L. Rubaldo, P. Chevalier, and A. Chantre,

(ST Microelectronics)

Thursday October 7, 2004   

13. Regular Strain Ultra Thin SiGe Buffers

Session Chair:Max Lagally

Co-Chair:   Rob Harper

    

(13.0) 8:00 - 8:10 AM - Welcome   

(13.1) 8:10 – 8:30 AM - Effect of Growth Temperature on Lattice p. 849

Relaxation during SiGe Growth on Si Substrates, Y. Moriyama,

N. Sugiyama, N. Hirashita, S. Nakaharai and S. Takagi (MIRAI-ASET)

(13.2) 8:30 – 8:50 AM - Thin Compliant SiGe for Relaxed SiGe and p. 857

Strained Si Growth,  G. G. Jernigan, M. E. Twigg, M. Fatemi, N. D. Bassim,

and P. E. Thompson  (US Naval Research Laboratory)

(13.3) 8:50 – 9:10 AM - Fabrication of Thin Relaxed SiGe Films for p. 865

Strained Si Applications, D. J. Tweet, J. S. Maa, J. J.  Lee, and S. T. Hsu

(Sharp Labs. – America)

(13.4) 9:10 – 9:30 AM - High-Quality Strain Relieved SiGe Buffer Prepared p. 877

by Means of Thermally-Driven Relaxation and CMP process, S. H. Kim,

Y. J. Song, K. H. Shim, J. Y. Kang (ETRI)

(13.5) 9:30 – 9:50 AM - Formation of High Quality SGOI Structure by p. 887

Modified Oxidation-Induced Ge Condensation Process,  T. Sadoh,

R. Matsuura, I. Tsunoda, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino,

and M. Miyao  (Kyushu University)

Coffee Break 9:50 – 10:05 AM

14. SiGe Epitaxy-Doping/Diffusion

Session Chair:Didier Dutartre

Co-Chair:C.W. Lui  

(14.1) 10:05 – 10:25AM - Retardation of Arsenic Diffusion in Silicon-p. 893

Germanium by co-Implantation, O. Dokumaci, P. Ronsheim, A. Mocuta,

D. Mocuta, P. Kozlowski, D. Chidambarrao, P. Saunders, and H. Chen (IBM)

(14.2) 10:25 – 10:45 AM - Diffusion in SiGe: Defect Injection Studies in Sb, p. 903

As and B, J. M. Bonar, M. S. A. Karunaratne, S. Uppal, P. Ashburn, and

A. F. W. Willoughby (Univ. of Southampton)

(14.3) 10:45 – 11:05 AM – C Atomic Order Doping at Si/Si1-xGex/Si p. 915

Heterointerface and Improvement of Thermal Stability, K. Takahashi,

T. Kobayashi, M. Sakuraba, and J. Murota (Tohoku University)

(14.4) 11:05 – 11:25 AM - Modeling of Germanium and Antimony p. 923

Diffusion in Si1-xGex H. Zhu (IBM)

(14.5) 11:25 – 11:45 AM - Low Temperature LPCVD Epitaxy of In-Situ p. 935

Boron Doped SiGe and SiGeC Strained Layers with sub-E17 Oxygen

Concentration D. Enicks and G. Oleszek (ATMEL)

Lunch Break 11:45 – 1:00 PM

15. Strain Characterization of SiGe Strained Layers

Session Chair:Ignaz Eisele

Co-Chair:Detlev Grützmacher

     

(15.1) 1:00 – 1:30 PM - Novel Device Concepts for SiGe Nanoelectronics p. 947

(Invited) D. Grützmacher, L. Zhang,  S. Golod, and V. Ya.

(Paul Scherrer Institut)

(15.2) 1:30 – 1:50 PM - Characterization of Ge Outdiffusion and Si Cap p. 951

Thickness in Strained Si/SiGe Structures using SIMS R. S. Hockett

G. Goodman, S. P. Smith, and P. B. Merrill (Charles Evans & Associates)

(15.3) 1:50 – 2:10 PM -  The Impact of Strained-Si/SiGe Heterostructure p. 961

Dislocations on the Electrical Activity of Defects, A. Czerwinski, L. Kordas,

K.R. Bray, W. Zhao, R. Wise, and G. A. Rozgonyi (NC St. Univ.)

(15.4) 2:10 – 2:30 PM - Effect of Thermal Processing on Dopant Layer p. 973

Abruptness in  Si1-xGex Heterostructures, N. L Rowell, D. C. Houghton,

I Berbezier, A. Ronda, D. Webb, and M. Ward (National Research Council,

AIXTRON. CNRS, ATMI)

(15.5) 2:30 – 2:50 PM - Dissecting a Compositionally Graded SiGe Virtual p. 983

Substrate by X-ray Reciprocal Space Mapping, J. Zhang, X. B. Li, and

P. F. Fewster (Imperial College London)

Coffee Break 2:50 – 3:05 PM 

16. EMA

Session Chair:Tsu-Jae King

Co-Chair:Hirobumi Watanabe

(16.1) 3:05 – 3:35 PM - Direct Deposition of Poly-Crystalline Siliconp. 991

Germanium on a Glass Substrate at 450°C and their TFT Application

(Invited), K. Shimizu, J. Zhang, and J. Hanna (Tokyo Institute of Technology)

(16.2) 3:35 – 4:05 PM - Industrial Applications of Poly-Silicon-Germanium p. 1001

as Functional MEMS Material, T. Fuchs, C. Leinenbach, S. Kronmueller,

F. Laermer, T. Thomas, K. Robb, H. Seidel and W. Frey (R. Bosch GmbH)

(16.3) 4:05 – 4:25 PM - Fast Recovery and Low Vf Characteristics on p. 1015

SiGe/Si/Si Pin Diodes, F. Hirose (Yamagata University)

(16.4) 4:25 – 4:45 PM - In-situ Doped Poly-SiGe LPCVD Process using p. 1021

BCl3 for Post-CMOS Integration of MEMS Devices, C. W. Low,

M L. Wasilik, H.Takeuchi, T.-J. King,  and R. T. Howe (Univ. CA – Berkeley)

ECS Banquet 6:30 PM   

Friday October 8, 2004

   

17. Optoelectronic Components II

Session Chair: Margit Zacharias

Co-Chair: Olivier Kermarrec

(17.0) 8:00 – 8:10 AM - Welcome   

(17.1) 8:10 – 8:30 AM - RP-CVD Grown Ge Islands for 1.3-1.6µm p. 1033

Photodetection, J. F. Damlencourt, B. Vandelle, B. Cluzel, V. Calvo,

S. David, J-M. Hartmann, J-M. Fedeli, and T. Billon (CEA-DRT/LETI)

(17.2) 8:30 – 8:50 AM - Photoresponse Study of Ge QDIPs for p. 1043

Mid-Infrared Wavelength, S. Tong, J.Y. Lee, F. Liu, H.J. Kim, and

K. L. Wang (Univ CA – LA)

(17.3) 8:50 – 9:10 AM - Infrared Photo-Detectors Based on a Ge-DOT/p. 1053

SiGe-Well Field Effect Transistor Structure, A. Elfving, G. V. Hansson,

and W.-X Ni (Linköping University)

(17.4) 9:10 – 9:30 AM - Improvement of Device Performance of p. 1059

Multicrystalline Si-based Solar Cells Using Multicrystalline SiGe with

Microscopic Compositional Distribution, K. Nakajima, K. Fujiwara, W. Pan,

N. Usami, T. Ujihara, and T. Shishido (Tohoku University)

(17.5) 9:30 – 9:50 AM - Improved Photovoltaic Cell Performance Based on p. 1067

Ge Islands Embedded into the Intrinsic Layer, A. Alguno, N. Usami, W. Pan,

K. Sawano, K. Fujiwara, T. Ujihara, Y. Shiraki, T. Yokoyama, and K. Nakajima

(Tohoku University)

Coffee Break 9:50 – 10:05 AM  

18. SiGe Processing I

Session Chair:Matty Caymax

Session Co-Chair:    Arkadii Samoilov 

   

(18.1) 10:05 – 10:35 AM - SiGe Material Used as DRAM Capacitor p. 1077

Electrodes (Invited),  E. X. Ping and E. Blomiley  (Micron)

(18.2) 10:35 – 10:55 AM - Ultraclean Hot-Wall LPCVD System p. 1087

Application for Blanket B-doped SiGe(C) and Selective Si Epi, Y. Kunii,

Y. Inokuchi, A. Moriya,  H. Kurokawa, and J. Murota (Hitachi)

(18.3) 10:55 – 11:15 AM - Growth and Morphological Stability of Nickel p. 1095

Germano-Silicide on Strained Si1-xGex (x=0.1 to 0.25) Under Rapid

Thermal Annealing, V. Carron, J. M. Hartmann, P. Holliger, F. Laugier,

and G. Rolland (CEA-DRT - LETI/DTS - CEA/GRE)

(18.4) 11:15 – 11:35 AM - Preparation and Evaluation of NiGe Gate p. 1107

Electrodes for Metal-Oxide-Semiconductor Devices, Y. Kaneko, H. Kondo,

A. Sakai, S. Zaima, and Y. Yasuda (CCRAST Nagoya Univ)

(18.5) 11:35 – 11:55 AM - Ultra-Shallow Junction Formation in Strained p. 1113

Si/Si1-xGex using Flash-Assist RTA, P. Kohli, R. Wise, G. Braithwaite,

M. T. Currie, A. Lochtefeld, M. Rodder, J. Bennett, M. Gostowski, B. Nguyen,

R. Cleavelin, S. Yu, M. Pas, J. Gelpey, S. McCoy,  A. Campion, and M. Chaumont (SEMATECH)

Lunch Break 11:55 – 1:10 PM

19. SiGe Epitaxy-Processing II

Session Chair:Junichi Murota

Session Co-Chair:    Yasuo Kunii   

(19.1) 1:10 – 1:30 PM - SiGe Wet Oxidation at Low Temperatures, p. 1115

N. Daval, E. Guiot, S. Bisson, I. Cayrefourcq, and K. K. Bourdelle (SOITEC)

(19.2) 1:30 – 1:50 PM - Maximization of Active As Doping in (selective) p. 1123 Epitaxial Si and SiGe Layers, R. Loo, P. Bajolet, J.W. Maes, M. Bauer, 

M. Caymax, and C. Arena (IMEC)

(19.3) 1:50 – 2:10 PM - Understanding and Improvement of the SiGe p. 1135

Wet Selective Etch for the sSOI Manufacturing by the Smart Cut Process,

O. Rayssac, P. Besson, V. Loup,  C. Aulnette, S. Favier, B. Osternaud,

L. Portigliatti, and I. Cayrefourcq (SOITEC)

(19.4) 2:10 – 2:30 PM - Low Temperature SiGe Layer Deposition with p. 1145

High Ge Content at Using Reduced-Pressure Chemical Vapor Deposition

from SiH2Cl2/GeH4 Precursors,  M. Bauer and P. Tomasini (ASM-America)

Coffee Break 2:30 – 2:45 PM

20. Regular Strain Strained Si/SiGe Surfaces

Session Chair:                 Roger Loo

Session Co-Chair:           Rick Wise      

(20.1) 2.45 – 3:05 PM - Directed Assembly and Strain Engineering of SiGe p. 1153

Films and Nanostructures (Invited), M. Lagally (Univ. WI – Madison)

(20.2) 3:05 – 3:25 PM - Chemical and Structural Characterization of p. 1161

Defects on Strained-Si/SiGe Heterostructures, K. R. Bray, W. Zhao,

A. Czerwinski, L. Kordas, R. Wise, and G. A. Rozgonyi (NC St. Univ.)

(20.3) 3:25 – 3:45 PM - Minimizing Micro-Roughness of Strained Silicon p. 1175

Surfaces Without CMP, R. Harper, A. Morgan, H. Edwards, and N. Vagadia

(IQE Silicon Compounds)

(20.4) 3:45 – 4:00 PM - A Comparative Study of Strain Field in Strained-Si p. 1179

on SiGe-On-Insulator and SiGe Virtual Substrates, K. Kutsukake, N. Usami,

T. Ujihara, K. Fujiwara, and K. Nakajima (Tohoku University)

(20.5) 4:35 – 4:55 PM - Effects of Hydrogen Annealing on Heteroepitaxial-p. 1189

Ge layers on Si : Surface Roughness and Electrical Quality, A. Nayfeh,

C. O. Chui, Krishna C. Saraswat, and T. Yonehara (Stanford University)