Monday October 13, 2008   

1. Symposium Keynote Session: FET and Epitaxy

Monday AM

Session Chair: David Harame

   

(1.0) 10:00 –  10:10 AM   Welcome

David Harame (IBM, USA)

(1.1) 10:10 – 11:00 AM  Germanium for High Performance MOSFETs and Optical Interconnects (Invited)

Krishna C. Saraswat, D. Kim, T. Krishnamohan, D. Kuzum, A. Okyay, A. Pethe, and H. Yu  (Stanford University, USA)

(1.2) 11:00 – 11:50 AM  Si and SiGe Epitaxy Perspective (Invited)

Wiebe B. de Boer  (Retired, Formerly TUDelft, Delft University of Technology, the Netherlands)

Lunch Break 11:50 AM – 1:10 PM 

2. Advanced CMOS Architectures

Monday PM

Session Chair: Hitoshi Wakabayashi

   

(2.1) 1:10 – 1:40 PM  Si/SiGe Epitaxy and Selective Etch Applications for Advanced Thin-Films MOSFET Structures (Invited)

Nicolas Loubet, Frederic Boeuf, S. Monfray, C. Fenouillet-Beranger, Stephane Denorme, Gregory Bidal, Estelle Batail, Thomas Skotnicki, and Didier Dutartre  (STMicroelectronics, France)

(2.2) 1:40 – 2:10 PM  Carbon- and Tin- Incorporated Source/Drain Stressors for CMOS Transistors (Invited)

Yee-Chia Yeo  (National University of Singapore, Singapore)

(2.3) 2:10 – 2:30 PM  Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge, and Si

Donghyun Kim, Tejas Krishnamohan, and Krishna C. Saraswat  (Stanford University, USA)

(2.4) 2:30 – 2:50 PM  Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs

Pouya Hashemi, Michael Canonico, Joel K.W. Yang, Leonardo Gomez, Karl K. Berggren, and Judy Hoyt (MIT Microsystems Technology Laboratories, USA)

Coffee Break2:50 – 3:05 PM

3. FET I: Strain Engineered FETs

Monday PM

Session Chair:Yee-chia Yeo

(3.1) 3:05 – 3:35 PMStress Manipulation with Strained-Silicon Directly (SSOI) on Insulator (Invited)

Jamie Schaeffer, for Aaron Thean  (Freescale Semiconductor, USA)

(3.2) 3:35 – 3:55 PM  High Hole Mobility SGOI Substrates Obtained by the Germanium Condensation Technique

Laurent Souriau, Tuan Nguyen, E. Augendre, Roger Loo, Valentina Terzieva, Matty Caymax, S. Cristoloveanu, Marc Meuris, and Wilfried Vandervorst,   (IMEC, Belgium)

(3.3) 3:55 – 4:15 PM  Simulation of <110> nMOSFETs with a Tensile Strained Cap Layer

Fabian Bufler, Frederik Heinz, Alexander Tsibizov, and Mohamed Oulmane  (Synopsys Schweiz GmbH, Switzerland)

(3.4) 4:15 – 4:45 PM  Strain Technology under Metal/High-k Damascene-Gate Stacks(Invited)

Hitoshi Wakabayashi(SONY Corporation, Japan)

(3.5) 4:45 – 5:05 PM  Study on Strain Memorization by Argon Implantation and Annealing

Masafumi Hino, Kouki Nagata, Tetsuya Yoshida, Daisuke Kosemura, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Atsushi Ogura, Takeo Hattori, and H. Iwai  (Tokyo Institute of Technology, Japan)

Dinner Break5:05 – 6:50 PM

4. Short Presentations

Monday PM

Session Chair:David Harame

NOTE:  The following presentations will also be presented as poster displays on Tuesday, October 14, 2008 in the ECS Evening Poster Session.

(4.01) 6:50 – 6:53 PM  Inductively Coupled Ar/CCl2F4 /Cl2 Plasma Etching of Ge

Taek Sung Kim, Sang-Sik Choi, Tae Soo Jeong, Sukill Kang and Kyu-Hwan Shim (Chonbuk National University, S. Korea)

(4.02) 6:53 – 6:56 PM  Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

Wen-Wei Wu and Sheng-Wei Lee (National Chiao Tung University, Taiwan)

(4.03) 6:56 – 6:59 PM  (moved)

(4.04) 6:59 – 7:02 PM  Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic Fields

Neil Armour, M. Yildiz, E. Yildiz,  and Sadik Dost(University of Victoria, Canada)

(4.05) 7:02 – 7:05 PM  Reactive Ion Etch of Si3N4 Spacers High Selective to Germanium

Efrain Altamirano, Eddy Kunnen, Brice De Jaeger, and W. Boullart  (IMEC, Belgium) 

(4.06) 7:05 – 7:08 PM  Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures

Mohammadreza Kolahdouz, Julius Hallstedt, Mikael Ostling, Rick Wise, and Henry H. Radamson  (Royal Institute of Technology KTH, Sweden)

(4.07) 7:08 – 7:11 PM Evaluation of DiMethylAminoGermaniumTetraChloride as a novel Carbon-Dopant and Germanium Precursor for Germanium and Silicon Germanium Chemical Vapor Deposition

Frederik E. Leys, Cong Liu, Xiaoping Shi, Bruno Lamare, Marc Schaekers, Roger Loo, Egbert Woelk, and Matty Caymax  (IMEC, Belgium)

(4.08) 7:11 – 7:14 PM  Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias

Ching-Fang Huang, Ying-Jhe Yang, Cheng-Yi Peng, Hung-Chang Sun, Chee Wee Liu, Yuan-Chun Hsu, Ching-Chien Shih, and J. Chen (Graduate Institute of Electronics Engineering, National Taiwan University, Taiwan)

(4.09) 7:14 – 7:17 PM  Hole Mobilities of Si0.6Ge0.4 Quantum Well Buried-Channel Field Effect Transistors on SOI

Kiyohisa Fujinaga  (Hokkaido Institute of Technology, Japan)

(4.10) 7:17 – 7:20 PM  Asymmetric Energy Distribution of Interface Traps in Germanium MOSFETs with HfO2 Gate Dielectric

Ruilong Xie, Nan Wu, Chen Shen, and Chunxiang Zhu  (National University of Singapore, Singapore)

(4.11) 7:20 – 7:23 PM  UV and Visible Raman Spectroscopy Applied to s-Si/Si1-xGex and s-SOI Multi-Layer Systems

Denis Rouchon, Jean-Michel Hartmann, Alexandre Crisci, and Michel Mermoux(CEA, France)

(4.12) 7:23 – 7:26 PM  Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation

Masanori Tanaka, Takanori Tanaka, Taizoh Sadoh, Jun Morioka, Tokuhide Kitamura, and Masanobu Miyao  (Kyushu University, Japan)

(4.13) 7:26 – 7:29 PM  Extended Defects in Ge-condensed SGOI Structures Fabricated by Proton and Helium Implantation

Dong Wook Kwak, Myung Won Seo, Dong Wha Lee, Youn Hwan Lee, and Hoon Young Cho  (Dongguk University, S. Korea)

(4.14) 7:29 – 7:32 PM  Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study

Denis Rouchon, Vincent Destefanis, Jean-Michel Hartmann, Alexandre Crisci, and Michel Mermoux  (CEA, France)

(4.15) 7:32 – 7:35 PM  Silicon Nanomembranes Incorporating Strain and Mixed Crystal Orientations

Shelley A. Scott, Deborah Cottrill, Donald Savage, and Max Lagally  (University of Wisconsin-Madison, USA)

(4.16) 7:35 – 7:38 PM  Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization

Taizoh Sadoh, Kaoru Toko, and Masanobu Miyao (Kyushu University, Japan)

(4.17) 7:38 – 7:41 PM  Reliability of Ti-based Gate Dielectrics on Strained-Si0.91Ge0.09 and Ge under Dynamic and AC Stressing

C. Mahata, M.K. Bera, P.K. Bose and C.K. Maiti  (Indian Institute of Technology, India)

(4.18) 7:41 – 7:44 PM Regrowth Kinetics Of Self-amorphized Germanium and Evolution of Implant Damage

Stephane Koffel, Pascal Scheiblin, and Alain Claverie (CEA, France)

(4.19) 7:44 – 7:47 PM  Temperature-dependent Operation of Ge on Si p-i-n Photodetectors

Lorenzo Colace, Michele Balbi, Vito Sorianello, and Gaetano Assanto  (Universite Roma Tre, Italy)

(4.20) 7:47 – 7:50 PM  Chemical Mechanical Polishing of Epitaxial Germanium on SiO2-patterned Si(001) Substrates

Jennifer M. Hydrick, Ji-soo Park, Jie Bai, Cheryl Major, Michael Curtin, James G. Fiorenza, Mark Carroll and Anthony Lochtefeld  (AmberWave Systems Corp., USA)

(4.21) 7:50 – 7:53 PM  Micro-Raman Studies on Nickel Germanides formed on (110)crystalline Ge

Cheng-Yi Peng, Ching-Fang Huang, Ying-Jhe Yang, and Chee Wee Liu  (Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan)

(4.22) 7:53 – 7:56 PM  Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2

Katsunori Makihara, Akira Kawanami, Mitsuhisa Ikeda, Seiichiro Higashi, and S. Miyazaki  (Hiroshima University, Japan)

(4.23) 7:56 – 7:59 PM  Generation of Acceptor Levels in Ge by the Uniaxial Strain -A Theoretical Approach

Kentaro Takai, Kenji Shiraishi, and Atsushi Oshiyama  (University of Tsukuba, Japan)

(4.24) 7:59 – 8:02 PM  Influence of in-situ Doped Boron on the Surface Roughening of SiGe:B Films

Ryutaro Tsuchida, Shinji Mori, Tsutomu Sato, Naotaka Uchitomi, and Ichiro Mizushima  (Toshiba Corporation, Semiconductor Company, Japan)

(4.25) 8:02 – 8:05 PM Low Temperature Epitaxial Growth of Full Heusler Alloy Fe2MnSi on Ge(111) Substrates for Spintronics Application

Koji Ueda, Yuichiro Ando, Kenji Yamamoto, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, and Masanobu Miyao  (Kyushu University, Japan)

(4.26) 8:05 – 8:08 PM  Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor

Yuji Kishi, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, and Masanobu Miyao  (Kyushu University, Japan)

(4.27) 8:08 – 8:11 PM  Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts

Dennis C. Tan, Chee Tee Chua, and Dongzhi Chi  (Institute of Materials Research and Engineering, Singapore)

(4.28) 8:11 – 8:14 PM  Heteroepitaxial Integration of Single Crystalline Ge(111) Layers on Si(111) via PrO2(111) Heterostructures

Alessandro Giussani, Olaf Seifarth, Peter Rodenbach, Peter Zaumseil, Hans-Joachim Muessig, Peter Storck, and Thomas Schroeder  (IHP, Germany)

(4.29) 8:14 – 8:17 PM  Dynamic Study on Microstrutural Evolution of Nickel-germanide in the Ni1-xZrx/Ge systems

Jae-Wook Lee, Kwan-Woo Song, Jee-Hwan Bae, Min-Ho Park, Han-Byul Kang and Cheol-Woong Yang (Sungkyunkwan University,Korea )

(4.30) 8:17 – 8:20 PM  Effect of Strained-Si Layer Thickness on Dislocation Distribution and SiGe Relaxation in Strained-Si/SiGe Heterostructures

Jinggang Lu, Mike Seacrist and George Rozgonyi(North Carolina State University, USA)

(4.31) 8:20 – 8:23 PM  Engineering SiGe Growth using Mechanically Responsive Ultrathin Substrates ,

H.-J. Kim-Lee, D.E. Savage, C.S. Ritz, M.G. Lagally, and K.T. Turner (Univ. of Wisconsin-Madison, USA)

(4.32) 8:23 – 8:26 PM  Characterization of Si1-xGex Epilayer Thickness, Ge and Doped Boron Concentration with UV-Vis-IR Spectroscopic Ellipsometer

Alexis Bondaz  and Laurent Kitzinger(SOPRA, Inc., USA )

(4.33) 8:26 – 8:29 PM  Study of Surface Modification on H-terminated Ge(100) Surface

Kibyung Park and Sangwoo Lim (Yonsei University, S. Korea )

(4.34) 8:29 – 8:32 PM  Role of Iodine on Oxidation of Ge(100) Surface in Methanol

Youngwhan Lee and Sangwoo Lim (Yonsei University, S. Korea )

Tuesday October 14 2008

5. Strain I.  Strain Engineering using Crystal Growth

Tuesday AM

Session Chair/Co-ChairMatty Caymax, Ichiro Mizushima

(5.1) 9:00 – 9:30 AM  Recent Progress and Challenges in Enabling Embedded Si:C Technology (Invited)

(Bin) Frank Yang, Zhibin Ren, Rohit Takalkar, Linda Black, Abhishek Dube, Hans Weijtmans, John Li, K. Chan, J P de Souza, Anita Madan, G. Xia, Zhengmao Zhu, Johnathan Faltermeier, Alexander Reznicek, Thomas Adam, Ashima Chakravarti, G. Pei, Rohit Pal, Bin Yang, Eric Harley, Brian Greene, Andreas Gehring, Ming Cai, Devendra Sadana, Dae-Gyu. Park, Dan Mocuta, Dominic Schepis, Edward Maciejewski, Scott Luning, and Effendi Leobandung  (Advanced Micro Devices, USA,  IBM, USA)

(5.2) 9:30 – 9:50 AM  Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques

Anita Madan, Jinghong Li, Zhibin Ren, Frank Yang, Eric Harley, Thomas Adam, Rainer Loesing, Zhengmao Zhu, Teresa Pinto, Ashima Chakravarti, Linda Black, Dominic Schepis, Rohit Takalkar, Abhishek Dube, and Hans Weijtmans  (IBM, USA, Advanced Micro Devices, USA))

(5.3) 9:50 – 10:10 AM  The Impact of Carbon on the Warpage of e-SiGe Wafers During Laser Anneal

Deborah J. Riley, Haowen Bu, Amitabh Jain, and Rajesh Khamankar  (Texas Instruments, USA)

(5.4) 10:10 -10:30 AM  Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si and SOI Wafers

Jean-Michel Hartmann, A. Papon, J. Colonna, T. Ernst, and T. Billon  (CEA-LETI, MINATEC, France)

(5.5) 10:30 – 10:50 AM  Simultaneous Optimization of the Material Properties, Uniformity and Deposition Rate of Polycrystalline CVD and PECVD Silicon-Germanium Layers for MEMS Applications

George Bryce, Simone Severi, B. Du Bois, M. Willegens, G. Glaes, R. Van Hoof, Luc Haspeslagh, S. Decoutere, and A. Witvrouw  (IMEC, Belgium)

Coffee Break10:50 – 11:05 AM  

6. FET II. High Mobility Channel Devices

Tuesday AM

Session Chair/Co-Chair Aaron Thean

(6.1) 11:05 – 11:35 AM  Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOS (Invited)

Toshifumi Irisawa, Toshinori Numata, Tsutomu Tezuka, Koji Usuda, Norio Hirashita, Yoshihiko Moriyama, Naoharu Sugiyama, and S. Takagi  (MIRAI-ASET, Japan)

(6.2) 11:35 AM – 12:05 PM  Elimination of Native Ge Dielectrics at Ge/High-k Dielectric Interfaces in Ge MOS Devices (Invited)

Gerald Lucovsky, J. Long, H. Seo, K. Chung, and S. Lee  (NC State University, USA)

(6.3) 12:05 – 12:25 PM  Mobility Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs

Tejas Krishnamohan, Anh-Tuan Pham, Christoph Jungemann, Bernd Meinerzhagen, and Krishna C. Saraswat  (Stanford University, USA)

Lunch Break12:25 – 1:40 PM

7. Processing I. Processing Si, SiGe, Ge and Related Compounds

Tuesday PM

Session Chair/Co-Chair Erich Kasper, Kiyokazu Nakagawa

(7.1) 1:40- 2:10 PM  The Versatile use of SiGe for High-performance Devices (Invited)

Erwin Hijzen, Johan Donkers, Philippe Meunier-Beillard, Eero Saarnilehto, Jan Sonsky, G. Hurkx, and W. van Noort    (NXP Semiconductors, Belgium)

(7.2) 2:10 – 2:40 PM  Integrating Selective Epitaxy in Advanced Logic & Memory Devices (Invited)

Satheesh Kuppurao, Yihwan Kim, Yonah Cho, Saurabh Chopra, Zhiyuan Ye, Errol Sanchez, and Schubert Chu  (Applied Materials, Inc., USA)

(7.3) 2:40 – 3:00 PM  HCl Selective Etch of Si1-xGex Versus Si for Silicon On Nothing and Multi Gate Devices

Vincent Destefanis, Jean-Michel Hartmann, Florian Hue, and Daniel Bensahel  (STMicroelectronics, France)

(7.4) 3:00 – 3:20 PM  Comparison Between Three Si1-xGex Versus Si Selective Etching Processes

Thierry Salvetat, Vincent Destefanis, Stephan Borel, Jean-Michel Hartmann, O. Kermarrec, and Y. Campidelli  (CEA LETI MINATEC, France)

(7.5) 3:20 – 3:40 PM  Etch Rates of Ge, GaAs, and InGaAs in Acids, Bases, and Peroxide Based Mixtures

Sonja Sioncke, David P. Brunco, Marc Meuris, O. Uwamahoro, Jan Van Steenbergen, Evi Vrancken, and Marc M. Heyns  (IMEC, Belgium)

Coffee Break3:40 – 3:55 PM 

8. Epitaxy I. Selective Growth of SiGe and In-situ Doping

Tuesday PM

Session Chair/Co-Chair Jean-Michel Hartmann, Yasuo Kunii

(8.1) 3:55 – 4:25 PM  Selective Epitaxial Growth of Si(Ge) for High Performance MOSFET Applications (Invited)

Ichiro Mizushima  (Toshiba Corporation, Semiconductor Company, Japan)

(8.2) 4:25 – 4:45 PM  SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology

Judson R. Holt, Eric Harley, Thomas Adam, Shwu-Jen Jeng, Keith Tabakman, Rohit Pal, Hasan Nayfeh, Linda Black, Jeremy Kempisty, Matthew Stoker, Abhishek Dube, and Dominic Schepis  (IBM, USA)

(8.3) 4:45 – 5:05 PM  Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS Purposes

Frederic GONZATTI, Jean-Michel Hartmann, and Karim Yckache  (CEA-LETI, France)

(8.4) 5:05 – 5:25 PM  Vapor Phase Doping With n-type Dopant Into Silicon by Atmospheric Pressure Chemical Vapor Deposition

Shotaro Takeuchi, Duy Nguyen, Frederik E. Leys, Roger Loo, Thierry Conard, Wilfried Vandervorst, and Matty Caymax  (IMEC, Belgium)

(8.5) 5:25 – 5:45 PM  Selective Polycrystalline Si Deposition on Epitaxial Si induced by B-Atomic Layer Doping

Yuji Yamamoto, Klaus Koepke, Oksana Fursenko, Guenter Weidner, Junichi Murota, and B. Tillack  (IHP, Germany, Tohoku University, Japan)

Dinner5:45 PM –

6:00 – 8:30 PM  Tuesday Evening Poster Session – Short Presentations from Session 4

Coral Exhibit Hall, Mid- Pacific Conference Center, Hilton Hawaiian Village

Wednesday October 15 2008

9. Strain II.  Characterization of Strained Materials

Wednesday AM

Session Chair/Co-Chair Steve Bedell, Heije Watanabe

(9.1) 8:30 – 9:00 AM  Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices (Invited)

Eddy R. Simoen, Geert Eneman, Peter Verheyen, Roger Loo, Mireia Bargallo Gonzalez, and Cor Claeys  (IMEC, Belgium)

(9.2) 9:00 – 9:20 AM  Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates

B. Gunnar Malm, Julius Hallstedt, Per-Erik Hellstrom and Mikael Ostling  (School of ICT, Sweden)

(9.3) 9:20 – 9:40 AM  Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

Takayoshi Shimura, Tomoyuki Inoue, Yuki Okamoto, Takuji Hosoi, Hiroki Edo, Satoshi Iida, Atsushi Ogura, and Heiji Watanabe  (Graduate School of Engineering, Osaka University, Japan)

(9.4) 9:40 – 10:00 AM  Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction

Jinghong Li, Angela Lamberti, Anthony Domenicucci, Henry Utomo, Nivo Rovedo, Zhijiong Luo, Sunfei Fang, Hung Ng, Judson R. Holt, Anita Madan, Chung Woh Lai, Ja-Hum Ku, Dominic Schepis, Jin-Ping Han, and Mark Lagus  (IBM, Samsung, Infineon, Chartered Semiconductor, USA)

(9.5) 10:00 – 10:20 AM  The Effect of Silicide Processing on Stress Reduction in Silicon Device Structures with Strained SiGe Elements

Igor Peidous and Patrick Press  (Applied Materials, Inc., USA)

Coffee Break10:20 – 10:35 AM

10. Optoelectronics I.  Si, SiGe, Ge and Related Compounds

Wednesday AM

Session Chair/Co-ChairKazumi Wada

(10.1)10:35 – 11:05 AM  Performance of Ge/Si Receivers at 1310 nm (Invited)

Mike Morse, Olufemi Dosunmu, Tao Yin, Yimin Kang, H. Liu, Gadi Sarid, Eyal Ginsburg, Rami Cohen, S. Litski, and Moshe Zadka  (Intel, USA)

(10.2) 11:05 – 11:35 AM  High Performance Ge Devices for Electronic-Photonic Integrated Circuits (Invited)

Jurgen Michel and Jifeng Liu  (Massachusetts Institute of Technology, USA)

(10.3) 11:35 – 11:55 AM  Epitaxial Growth of Ge Thick Layers on Nominal and 6 degrees off Si(001); Ge Surface Passivation by Si

Jean-Michel Hartmann, H. Grampeix, and L. Clavelier  (CEA-LETI, MINATEC, France)

(10.4) 11:55 AM – 12:15 PM Characteristics of Ge and SiGe Pin Photodiodes Without Post-growth Annealing

Sungbong Park, Shinya Takita, Ryuzo Ichikawa, Yasuhiko Ishikawa, and Kazumi Wada  (Univ of Tokyo, Japan)

(10.5) 12:15 – 12:35 PM  High-Speed, Monolithic CMOS Receivers with Ge on Si Waveguide Photodetectors

Gianlorenzo Masini, Subal Sahni, Behnam Analui, Giovanni Capellini, Jeremy Witzens, and Cary Gunn  (Luxtera, Inc., USA)

Short Lunch Break12:35 – 1:35 PM

11. Epitaxy II. Modelling, quantum structures and Si:C

Wednesday PM

Session Chair/Co-ChairRoger Loo, Shawn Thomas

(11.1) 1:35 – 2:05 PM  A Multiscale Model of the Low-Temperature CVD of Si and ncSi  (Invited)

Carlo Cavallotti, A. Barbato  (Politecnico di Milano, Italy)

(11.2) 2:05 – 2:35 PM  Epitaxial Growth of Si:C by Means of Gas Source Molecular Beam Epitaxy  (Invited)

Akira Yamada, Hanae ISHIHARA, and Komaki INOUE  (Tokyo Institute of Technology, Japan)

(11.3) 2:35 – 2:55 PM  Massive Batch Selective Si and SiGe Epitaxial Deposition

Douglas J. Meyer, Erdal Suvar, Franziska Rohlfing, and T. Grabolla (Centrotherm Technologies,  USA)

(11.4) 2:55 – 3:15 PM  SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition

Cheng-Han Lee, Cheng Min Lin, Chee Wee Liu, H. Chang, Sheng Wei Lee, Pavel Shushpannikov,V. Gorodtsov, and Robert Goldstein  (National Taiwan University, Taiwan)

(11.5) 3:15 – 3:35 PM  Ab-initio Simulation of Formation and Diffusion Energies of Intrinsic Point Defects in Ge

Piotr Spiewak, Krzysztof Kurzydlowski, Koji Sueoka, Jan Vanhellemont, and Igor Romandic  (Warsaw University of Technology, Poland)

Coffee Break3:35 – 3:50 PM

12. Surfaces and Interfaces I. Growth and Defect Control

Wednesday PM

Session Chair/Co-Chairs: Seiichi Miyazaki, Guo-Qiang (Patrick) Lo

(12.1) 3:50 – 4:20 PM  Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels (Invited)

Annelies Delabie, A. Alian, Matty Caymax, Florence Bellenger, Guy Brammertz, Thierry Conard, A. Franquet, Michel Houssa, Sonja Sioncke, S. Van Elshocht, Marc M. Heyns, Marc Meuris, David P. Brunco, J. Van Hemmen, W. Keuning, Erwin Kessels, Valery Avanasiev, and Andre Stesmans  (IMEC, Belgium)

(12.2) 4:20 – 4:50 PM  Interface and Defect Control for Group IV Channel Engineering (Invited)

Akira Sakai, Yuji Ohara, Takaya Ueda, Eiji Toyada, Koji Izunome, Shotaro Takeuchi, Yosuke Shimura, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima, and Shigeru Kimura  (Osaka University, Japan)

(12.3) 4:50 – 5:10 PM  Fixed-Oxide-Charge Characterization by Photoreflectance Spectroscopy in HfO2 on Ge Treated by Fluorine

Takeshi Kanashima, Hyun Lee, Yuya Mori, Hideto Imajo, and Masanori Okuyama  (Osaka University, Japan)

(12.4) 5:10 – 5:30 PM  Enhanced Performance for Ge MOS Devices with High-k Gate Dielectrics through a Novel Post-gate CF4-plasma Treatment Process

Ruilong Xie, M. Thamarai, Zhiqiang Sun, Mingbin Yu, Meiying Lai, Lap Chan, and Chunxiang Zhu  (National University of Singapore, Singapore)

(12.5) 5:30 – 5:50 PM Formation of Ge3N4/Ge Structures Using Nitrogen Radicals and Their Thermal Stability

Hiroki Kondo, Shigehisa Oda, Masaki Ogawa, and Shigeaki Zaima  (Graduate School of Engineering, Nagoya University, Japan)

ShortDinner Break5:50 – 7:00 PM 

13. Workshop on Nanotechnology

Wednesday PM

Session Chair: Steven Koester

7:00 – 7:30 PM  WorkshopMixer

(13.0) 7:30 – 7:35 PM  Nanowire Panel Introduction  

Steve Koester (IBM, USA)

(13.1) 7:35 – 7:45 PM  Nanowires to Replace Planar CMOS?

Aaron Thean (Freescale Semiconductor, USA)  WITHDRAWN

(13.2) 7:45 – 7:55 PM  Gate-All-Around Silicon Nanowire Devices: Are these the Future of CMOS?

Guo-Qiang P. Lo, N. Singh, S. Rustagi, K. D. Buddharaju, N. Balasubramanian, and D. Kwong (Institute of Microelectronics, Singapore)

(13.3) 7:55 – 8:05 PM  Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs

Judy Hoyt, Pouya Hashemi, and Leonardo Gomez (Massachusetts Inst. Of Technology, USA)

(13.4) 8:05 – 8:15 PM  Opportunities for Group IV Nanowire Devices in Si CMOS Technology

Emanuel Tutuc, S. Benerjee, J, Nah, K. Varahramyan, N. Jain, and D. Ferrer (The University of Texas at Austin, USA)

(13.5) 8:15 – 8:25 PM  III/V Nanowire FETs for CMOS?

Lars-Erik Wernersson  (Lund University, Sweden)

(13.6) 8:25 – 9:30 PM  Discussion

Thursday October 16, 2008

14. Surfaces and Interfaces II. Metal Contacts and High-k / Semiconductor Interfaces

Thursday AM

Session Chair/Co-Chair:Shigeaki Zaima, Kenji Shiraishi

(14.1) 8:00 – 8:30 AM Novel Metal-Germinade Contact Technology  (Invited) 

Guo-Qiang P. Lo, Kah-Wee Ang, M. Yu, and Dim-Lee Kwong  (Institute of Microelectronics, Singapore)

(14.2) 8:30 – 8:50 AM  Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully-Processed 200mm GeOI Substrates

Louis Hutin, Cyrille Le Royer, Claude Tabone, Veronique Carron, Vincent Delaye, Fabrice Nemouchi, Francois Aussenac, Laurent Clavelier, and Simon Deleonibus  (CEA-LETI/MINATEC, France)

(14.3) 8:50 – 9:10 AM  Very High-k Tetragonal ZrO2 on Ge with GeO2 Passivating Interfacial Layer

Polychronis Tsipas, Stelios N Volkos, Andreas Sotiropoulos, Georgia Mavrou, Sotiria Galata, Yerassimos Panayiotatos, and Athanasios Dimoulas  (National Center for Scientific Research, Demokritos, Greece)

(14.4) 9:10 – 9:40 AM  Ab-Initio Molecular Dynamics Simulations of Properties of a-Al2O3/Vacuum and a-ZrO2 /Vacuum vs a-Al2O3/Ge(100)(2x1) and a-ZrO2 /Ge(100)(2x1) Interfaces (Invited)

Evgueni Chagarov and Andrew Kummel  (UCSD, USA)

(14.5) 9:40 – 10:00 AM  Why and How Atom Intermixing Proceeds at Metal/Si Interfaces; Silicide Formation vs. Random Mixing

Takashi Nakayama, S. Shinji, and S. Sotome  (Chiba University, Japan)

Coffee Break10:00 – 10:15 AM

15. Epitaxy III. IV:IV alloys growth and alternative precursors

Thursday AM

Session Chair/Co-ChairMasao Sakuraba, Yihwan Kim

(15.1) 10:15 – 10:45 AM  Chemical Vapor Deposition Epitaxy of Silicon-based Materials using Neopentasilane (Invited)

James Sturm and Keith H. Chung   (Princeton University, USA)

(15.2) 10:45 – 11:15 AM Nanosynthesis of Si-Ge-Sn Semiconductors and Devices via Purpose-built Hydride Compounds (Invited)

John Kouvetakis, J. Tolle, R. Roucka, V. D’Costa, Y. Fang, A. Chizmeshya, and J. Menendez  (Arizona State University, USA)

(15.3) 11:15 – 11:35 AM Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing

Hyun-Yong Yu, Jin-Hong Park, Ali K. Okyay, and Krishna C. Saraswat  (Stanford University, USA)

(15.4) 11:35 – 11:55 AM  Selective Epitaxial Deposition of Ge on Si: Facet Formation and How to Avoid It

Gang Wang, Frederik E. Leys, Laurent Souriau, Roger Loo, Matty Caymax, David P. Brunco, Jan Geypen, H. Bender, Marc Meuris, Wilfried Vandervorst, and Marc M. Heyns  (IMEC, Belgium)

(15.5) 11:55 AM – 12:15 PM  Selective Epitaxial Growth of Ge-on-Si for Photodiode Applications

Meekyung Kim, Oluwamuyiwa Olubuyide, J. Yoon, and Judy Hoyt  (Massachusetts Institute of Technology, USA)

Lunch Break12:15 – 1:30 PM 

16. Optoelectronics II.  Emitters/Modulators/QW

Thursday PM

Session Chair: Subal Sahni

(16.1) 1:30 – 2:00 PM  Ge Quantum Well Modulators on Si (Invited)

David Miller, R. Shaevitz, J. Roth, S. Ren, and O. Fidaner  (Stanford University, USA)

(16.2) 2:00 – 2:30 PM  Ge Dots in Optical Microcavities--a Possible Direction for Silicon-based Light Emitting Devices (Invited)

Jinsong Xia, Ryuichiro Tominaga, S. Iwamoto, Noritaka Usami. , Y. Aragawa, and Yasuhiro Shiraki  (Musashi Institute of Technology, Japan)

(16.3) 2:30 – 3:00 PM  Si/SiGe Bound-to-Continuum Quantum Cascade Lasers (Invited)

Douglas J. Paul, Guy Matmon, Leon Lever, Zoran Ikonic, Robert Kelsall, D. Chrastina, G. Isella, H. von Kanel, E. Muller, and A. Neels  (University of Glasgow, Scotland)

(16.4) 3:00 – 3:20 PM  Photocurrent of SiGe/Si Strained Multiple Quantum-wells Grown by UHV-CVD

Taek Sung Kim, Sang-Sik Choi, Tae Soo Jeong, Sukill Kang, and Kyu-Hwan Shim  (Chonbuk National University, S Korea)

(16.5) 3:20 – 3:40 PM  Optical Bleaching of Thin Film Ge on Si

Xiaochen Sun, Jifeng Liu, Lionel Kimerling, and Jurgen Michel  (Massachusetts Institute of Technology, USA)

Coffee Break3:40 – 3:55 PM 

17. Processing II.  Processing of Si, SiGe, Ge and Related Compounds

Thursday PM

Session Chair/Co-Chair:Bernd Tillack, Erwin Hijzen

(17.1) 3:55 – 3:25 PM  High Ge content SiGe alloys: Doping and Contact Formation (Invited)

Erich Kasper, Michael Oehme, and Jaime Lupaca-Schomber  (University of Stuttgart, Germany)

(17.2) 4:25 – 4:55 PM  New Heating Method for Polycrystallization of Amorphous Si using Microwave Plasma Irradiation (Invited)

Kiyokazu Nakagawa  (University of Yamanashi, Japan)

(17.3) 4:55 – 5:15 PM  Low Temperature Boron Activation in Amorphous Ge for Three Dimensional Integrated Circuits (3D-ICs) using Ni-induced Crystallization

Jin-Hong Park, Munehiro Tada, Hyun-Yong Yu, Duygu Kuzum, Yeul Na, and Krishna Saraswat  (Stanford University, USA)

(17.4) 5:15 – 5:35 PM  Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si layers

Julien Bouvier, Georges Bremond, Benoit Vandelle, Florence Brossard, and Didier Dutartre  (STMicroelectronics, France)

(17.5) 5:35 – 5:55 PM Dry etch challenges in Gate All Around Devices for sub 32 nm applications

Sebastien Barnola, Christian Vizioz, Stephan Borel, Pauline Gautier, Christian Arvet, Thierry Chevolleau, Thomas Ernst, Bernard Guillaumot, Nathalie Vulliet, Cecilia Dupre, Emilie Bernard, S. Pauliac-Vaujeour, C. Comboroure, J.M. Hartmann, V. Maffini-Alvaro, and S. Becu  (CEA-LETI-Minatec, France)

Dinner5:55 PM

Friday October 17, 2008   

18. Emerging Applications.  Novel Devices

Friday AM

Session Chair:Emanuel Tutuc

(18.1) 8:30 – 9:00 AM  Spin-polarized Electron Transport in Silicon (Invited)

Ian Appelbaum  (University of Maryland, USA)

(18.2) 9:00 – 9:20 AM  Formation of Si- and Ge-based Full-Heusler Alloy Thin Films using SOI and GOI Substrates for the Half-metallic Source and Drain of Spin Transistor

Yota Takamura, Yohei Nagahama, Akira Nishijima, Ryosho Nakane, and Satoshi Sugahara  (Tokyo Institute of Technology, Japan)

(18.3) 9:20 – 9:40 AM  Germanium-based Ferromagnetic Semiconductor Ge1-xFex for Silicon Spintronics

Yusuke Shuto, Masaaki Tanaka, and Satoshi Sugahara  (The University of Tokyo, Japan)

(18.4) 9:40 – 10:10 AM  SiGe Tunnel Field Effect Transistors (Invited)

Ignaz Eisele, H. Lochner, and Martin Schlosser  (Institute of Physics, Germany)

(18.5) 10:10 – 10:30 AM  Electrodeposition of Si-Ge alloy and of Si and Ge nanowires from an ionic liquid

Frank Endres, Rihab Al Salman, and Sherif Zein El Abedin  (Institute of Particle Technology, Germany)

(18.6) 10:30 – 10:50 AM  Phonon Transport and Thermoelectricity in Silicon Nanostructures

Hyuk Ju Ryu, Clark Ritz, Levente Klein, Hendrik Hamann, Max Lagally, and Mark Eriksson  (University of Wisconsin-Madison, IBM, USA)

(18.7) 10:50 – 11:10 AM  Enhanced Ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal

Andrew S. Wong, Ghim Wei Ho and Dong Zhi Chi  (Materials Growth Group, Institute of Materials Research and Engineering, Singapore)

Coffee Break11:10 – 11:25 AM

19. Related Materials. SiC, Ge Compounds, and III-V Integration

Friday AM

Session Chair/Co-Chair Alexander Reznicek, Matthias Bauer

(19.1) 11:25 – 11:55 AM  SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET (Invited)

Matthias Bauer, Vladimir Machkaoutsan, Doran Weeks, Yangting Zhang, J. Spear, Shawn Thomas, Peter Verheyen, C. Kerner, F. Clemente, H. Bender, D. Shamiryan, Roger Loo, A. Hikavyy, T. Hoffmann, Philipe Absil, and Serge Biesemans  (ASM America, USA, IMEC, Belgium)

(19.2) 11:55 AM – 12:25 PM Monolithic III-V/Si Integration (Invited)

Eugene A. Fitzgerald, M. Bulsara, Y. Bai, C. Cheng, W. Liu, D. Lubyshev, J. Fastenau, Y. Wu, M. Urtega, W. Ha, J. Bergman, B. Brar, C. Drazek, N. Daval, F. Leterte, W. Hoke, J. LaRoche, K. Herrick, and T. Kazior(Massachusetts Institute Of Technology, USA)

(19.3) 12:25 – 12:45 PM  Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion

Bin Yang, Joel De Souza, Katherine Saenger, Steve Bedell, Alexander Reznicek, Thomas Adam, Marinus Hopstaken and Devendra Sadana  (Advanced Micro Devices, Inc. USA, IBM, USA)

(19.4) 12:45 – 1:05 PM  Ge Interface Passivation Techniques and Their Thermal Stability

Duygu Kuzum, Tejas Krishnamohan, Abhijit Pethe, Yasuhiro Oshima, Yun Sun, James McVittie, Paul McIntyre, Piero Pianetta, and Krishna Saraswat  (Stanford University, USA)

(19.5) 1:05 – 1:25 PM  Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium

Eddy R. Simoen, Antoine Brugere, Alessandra Satta, Benny Van Daele, Bert Brijs, Olivier Richard, Jan Geypen, Marc Meuris, and Wilfried Vandervorst  (IMEC, Belgium)

Lunch Break1:25 – 2:40 PM 

20. HBT.  New Techniques, Performance Levels, and Applications

Friday PM

Session Chair/Co-Chair Mikael Ostling, Katsuyoshi Washio

(20.1) 2:40 – 3:10 PM  SiGe:C BiCMOS Technologies for Automotive Radar Applications (Invited)

Gerhard G. Fischer, Srdjan Glisic, and Bernd Heinemann  (IHP, Germany)

(20.2) 3:10 – 3:40 PM  3D Integration Techniques Applied to SiGe Power Amplifiers (Invited)

Ramana M. Malladi, Alvin Joseph, Peter Lindgren, Wan Ni, Dawn Wang, Hanyi Ding, Mete Erturk, and Rosemary Previti-Kelly  (IBM, USA)

(20.3) 3:40 – 4:00 PM  SiGe HBT Featuring fT > 600GHz at Cryogenic Temperature

Nicolas Zerounian, Eloy Ramirez Garcia, Fredric Aniel, Pascal Chevalier, Boris Geynet, and Alain Chantre  (IEF, Univ Paris-Sud, CNRS, UMR 862, France)

(20.4) 4:00 – 4:20 PM  3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOI

Marco Bellini, John Cressler, Marek Turowski, Gregory Avenier, Alain Chantre, and Pascal Chevalier  (Georgia Institute of Technology, USA)

(20.5) 4:20 – 4:40 PM  Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

Katsuya Oda, Makoto Miura, Hiromi Shimamoto, and Katsuyoshi Washio  (Hitachi Ltd., Japan)