ECS Transactions, Volume 50, Issue 9

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices

Table of Contents

Chapter 1 Opening and Plenary Session

iii

Monday AM Session Chair:

D. Harame Introductory Remarks

8:25 AM

D. Harame (IBM Systems and Technology Group)

(E17-3101)8:45 AM (Invited) Advanced CMOS Scaling and FinFET Technology

E. J. Nowak (IBM)

(E17-3102)9:40 AM (Invited) FinFET and UTB--How to Make Very Short Channel MOSFETs

100. C.Hu (University of California, Berkeley)
     

Monday AM Session Chair:Y.-C. Yeo

(E17-3103)10:50 AM

Chapter 2 FET/Strain Session 1: FinFET

Effect of Fin Doping Concentration on the Electrical Characteristics of Germanium-on-Insulator Multi-Gate Field-Effect Transistor

B. Liu, X. Gong, C. Zhan, G. Han (National University of Singapore (NUS)), N. Daval, C. Veytizou, D. Delprat, B. Nguyen (Soitec), and Y. Yeo (National University of Singapore (NUS))

ix(E17-3104)11:10 AM

Germanium Gate-All-Around pFETs on SOI31

H. Chang (GIEE,NTU), S. Hsu, C. Chu (National Nano Device Laboratories), Y. Chen, W. Tu (National Taiwan University), P. Sung, G. Luo (National Nano Device Laboratories), Y. Yin, and C. Liu (National Taiwan University)

(E17-3105)11:30 AM

Selective Growth of Strained Ge Channel on Relaxed SiGe Buffer in Shallow39 Trench Isolation for High Mobility Ge Planar and Fin p-FET

B. Vincent, L. Witters, O. Richard, A. Hikavyy, H. Bender, R. Loo, M. Caymax, and A. Thean (imec)

(E17-3106)11:50 AM

Stress Techniques and Mobility Enhancement in FinFET Architectures47

G. Eneman, L. Witters, J. Mitard, G. Hellings, A. De Keersgieter (imec), D. P. Brunco (Globalfoundries), A. Hikavyy, B. Vincent, E. Simoen, P. Favia, H. Bender, A. Veloso, T. Chiarella, G. Boccardi, M. Kim, M. Togo, R. Loo, K. De Meyer, N. Horiguchi, N. Collaert, and A. Thean (imec)

Chapter 3 HBT Session 1: Advanced SiGe HBT Technology

Monday PM Session Co-Chairs:G. Niu and M. Ostling

(E17-3107)1:40 PM (Invited) Advanced Transistor Architectures for Half-Terahertz SiGe HBTs61

B. Heinemann, A. Fox, and H. Rücker (IHP)

(E17-3108)2:10 PM

Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance73 through Detailed Process/Device Simulation

R. A. Camillo-Castillo (IBM Microelectronics), J. Johnson (IBM Systems and Technology Group), Q. Liu, P. Cheng, J. W. Adkisson (IBM Microelectronics), and D. L. Harame (IBM Systems and Technology Group)

x

(E17-3109)2:30 PM

Improved Frequency Response in a SiGe npn Device through Improved83 Dopant Activation

J. W. Adkisson (IBM Microelectronics), M. H. Khater (IBM T.J. Watson Research Center), J. P. Gambino, P. Cheng, V. Jain, R. A. Camillo-Castillo (IBM Microelectronics), C. Lavoie (IBM T.J. Watson Research Center), A. Sutton, O. Gluschenkov (IBM Semiconductor Research and Development Center), Q. Liu, T. McDevitt (IBM Microelectronics), S. U. Engelmann (IBM T.J. Watson Research Center), J. J. Pekarik (IBM Microelectronics), and D. L. Harame (IBM Systems and Technology Group)

(E17-3110)2:50 PM

Evaluation and Modeling of Relative Importance of RF Noise Sources in95 SiGe HBTs Using Various Noise Representations

Z. Xu and G. Niu (Auburn University)

(E17-3111)3:10 PM (Invited) Strained Silicon Heterojunction Bipolar Transistors109

A. O'Neill (Newcastle University)

(E17-3112)3:40 PM

A Self-Aligned Sacrificial Emitter Process for High Performance SiGe HBT121 in BiCMOS

Q. Liu, J. W. Adkisson (IBM Microelectronics), J. Benoit (IBM Systems and Technology Group), R. A. Camillo-Castillo (IBM Microelectronics), K. K. Chan (IBM Research), P. Cheng (IBM Microelectronics), J. Ellis-Monaghan, T. Gabert (IBM Systems and Technology Group),

J. P. Gambino (IBM Microelectronics), P. Gray, J. Hasselbach (IBM Systems and Technology Group), V. Jain (IBM Microelectronics), M. H. Khater (IBM T.J. Watson Research Center), B. Leidy (IBM Systems and Technology Group), D. Park (IBM Research), J. J. Pekarik (IBM Microelectronics), M. Tiersch, C. Willets, B. K. Zetterlund, and D. L. Harame (IBM Systems and Technology Group)

xi

Chapter 4 FET/Processing/Strain Session 1: SiGe and Ge Channel FET

Tuesday AM Session Co-Chairs:Y.-C. Yeo and B. Tillack

(E17-3113)8:00 AM

(Invited) Implant Free SiGe-Quantum Well: From Device Concept To High-131 Performing pFETs

J. Mitard, G. Eneman, G. Hellings, L. Witters, A. Hikavyy, B. Vincent, R. Loo, H. Bender, N. Horiguchi, N. Collaert, and A. Thean (imec)

(E17-3114)8:30 AM

Effective Condensation Process for Higher Ge Concentration and Thin SiGen/a layer-on-insulator Substrates in Advanced High Mobility MOSFETs

D. Lee, T. Shim, T. Kim, S. Song, S. Lee (Hanyang University), R. Okuyama (Sumco Corporation), and J. Park (Hanyang University)

(E17-3115)8:50 AM

SiGe Doped-Channel FET Formed by Sputter Epitaxy Method145

M. Yoshikawa, H. Otsuka (Tokyo University of Agriculture & Technology), A. Kasamatsu, N. Hirose, T. Mimura, T. Matsui (National Institute of Information and Communications Technology), and Y. Suda (Tokyo University of Agriculture & Technology)

(E17-3116)9:10 AM

Hole Mobility Boost of Ge p-MOSFETs by Composite Uniaxial Stress and151 Biaxial Strain

H. Lan, Y. Chen, J. Lin, and C. Liu (National Taiwan University)

(E17-3117)9:50 AM

(Invited) Modeling of Field-Effect-Transistors with Strained and Alternative157 Channel Materials

F. Conzatti, D. Esseni, P. Palestri, and L. Selmi (University of Udine)

(E17-3118)10:20 AM

Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility171 in ETSOI MOSFETs

T. Ohashi, S. Oda (Tokyo Institute of Technology), and K. Uchida (Keio University)

xii

Chapter 5 Surfaces and Interfaces Session 1

Tuesday AM Session Co-Chairs:S. Miyazaki and S. Zaima

(E17-3119)10:40 AM

(Invited) Reliability of SiGe Channel MOS177 J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, P. Roussel, M. Cho, T. Kauerauf, L. Witters, A. Hikavyy, G. Hellings, L. Ragnarsson, N. Horiguchi (imec), T. Grasser (T.U. Wien),

M. M. Heyns, and G. Groeseneken (imec)

(E17-3120)11:10 AM

Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI197 PMOS Metallic Source and Drain

E. Bourjot (STMicroelectronics), F. Nemouchi, V. Carron (CEA-LETI), Y. Morand (STMicroelectronics), S. Bernasconi, M. Vinet, J. Damlencourt, F. Allain, O. Cueto, and D. Lafond (CEA-LETI)

(E17-3121)11:30 AM

(Invited) Gate Stack and Source/Drain Junction Formations for High-205 Mobility Ge MOSFETs

H. Nakashima, K. Yamamoto, H. Yang, and D. Wang (Kyushu University)

(E17-3122)12:00 PM

Thermally Stable NiSi2 for Ge Contact with Schottky Barrier Height217 Modulation Capability

R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, and H. Iwai (Tokyo Institute of Technology)

(E17-3123)12:20 PM

Effect of an Atomically Matched Structure on Fermi-level Pinning at223 Metal/p-Ge Interfaces

K. Kasahara, H. Yoshioka, Y. Tojo, T. Nishimura, S. Yamada, M. Miyao, and K. Hamaya (Kyushu University)

xiii

Chapter 6 Processing Session 1: Strain, Defects, and Diffusion

Tuesday PM Session Co-Chairs:D. Gruetzmacher and A. Sakai

(E17-3124)1:50 PM

(Invited) Understanding Diffusion, Activation, and Related Phenomena in233 SiGe Alloys: Models and Challenges

H. W. Kennel (Intel Corporation)

(E17-3125)2:20 PM

(Invited) Strain Control of Si and Si1-x-yGexCy Layers in Si/Si1-x-yGexCy/Si245 Heterostructures by Low-Pressure Chemical Vapor Deposition

J. Murota, T. Kikuchi, J. Hasegawa, and M. Sakuraba (Tohoku University)

(E17-3126)2:50 PM

Phosphorus Profile Control in Ge by Si Delta Layers255

Y. Yamamoto, P. Zaumseil, R. Kurps (IHP), J. Murota (Tohoku University), and B. Tillack (IHP)

(E17-3127)3:10 PM

Dopant Enhanced Diffusion for High n-typed Doped Ge263

Y. Cai, R. E. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel (Massachusetts Institute of Technology)

(E17-3128)3:30 PM Study of Ge Threading Dislocations Post Growth Treatments267

A. Silber and E. Ginsburg (Micron Semiconductors Israel Ltd.)

Chapter 7 Optoelectronics Session 1: Solar Cells, Emission, and Photonics

Tuesday PM Session Chair:G. Masini

(E17-3129)1:50 PM

(Invited) Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial277 Growth

K. Oda, K. Tani, S. Saito, and T. Ido (PETRA) xiv

(E17-3130)2:20 PM

(Invited) Group-IV Subcells in Multijunction Concentrator Solar Cells287 R. R. King, C. Fetzer, P. Chiu, E. Rehder, K. Edmondson, and N. Karam (Spectrolab, Inc.)

(E17-3131)2:50 PM

Substrate Design and Thermal Budget Tuning for Integration of Photonic297 Components in a High-Performance SiGe:C BiCMOS Process

D. Knoll, H. H. Richter, B. Heinemann, S. Lischke, Y. Yamamoto, L. Zimmermann, and B. Tillack (IHP)

(E17-3132)3:10 PM

Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting305 Diodes

P. Velha, K. F. Gallacher, D. C. Dumas, D. J. Paul (University of Glasgow), M. Myronov, and D. R. Leadley (University of Warwick)

(E17-3133)3:30 PM

Parameters Controlling Emission of Terahertz Frequency Electromagnetic309 Radiation from InAs and GaAs: An Ensemble Monte Carlo Simulation Study

D. L. Cortie and R. A. Lewis (University of Wollongong)

Chapter 8 Epitaxy Session 1: Pre-epi Si Surface Cleaning and III-V Compound Semiconductor Hetero-epitaxy

Tuesday PM Session Co-Chairs:Y.-C. Yeo and A. Reznicek

(E17-3134)4:05 PM

(Invited) Selective-Area Epitaxial Lateral Overgrowth of InGaAs Microdiscs313 on Si

M. Sugiyama (University of Tokyo)

(E17-3135)4:35 PM

(Invited) III-V/GaP Epitaxy on Si for Advanced Photovoltaics and Green321 Light Emitters

T. J. Grassman, C. Ratcliff, A. M. Carlin, J. A. Carlin, L. Yang, M. J. Mills, and S. A. Ringel (The Ohio State University)

(E17-3136)5:05 PM

Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces333

P. Sharma, T. Milakovich, M. T. Bulsara, and E. A. Fitzgerald (Massachusetts Institute of Technology)

xv

(E17-3137)5:25 PM

High Efficiency Low Temperature Pre-epi Clean Method for Advanced339 Group IV epi Processing

V. Machkaoutsan (ASM Belgium), K. D. Weeks, M. Bauer (ASM America), J. Maes (ASM Belgium), J. Tolle (ASM America), S. G. Thomas (ASM), A. Alian, A. Hikavyy, and R. Loo (imec)

(E17-3138)5:45 PM

Heteroepitaxy of III-V Compound Semiconductors on Silicon for Logic349 Applications: Selective Area Epitaxy in Shallow Trench Isolation Structures vs. Direct Epitaxy Mediated by Strain Relaxed Buffers

M. Cantoro, C. Merckling, S. Jiang, W. Guo, N. Waldron, H. Bender, A. Moussa, B. Douhard, W. Vandervorst, M. M. Heyns, J. Dekoster, R. Loo, and M. Caymax (imec)

Chapter 9 Optoelectronics Session 2: Lasing, Strain and Interconnects

Tuesday PM Session Chair:G. Masini

(E17-3139)4:05 PM (Invited) Electrically Pumped Lasing from Ge-on-Si359

J. Michel (Massachusetts Institute of Technology)

(E17-3140)4:35 PM

(Invited) Strain Engineering for Optical Gain in Germanium363 M. El Kurdi, M. De Kersauson, A. Ghrib (Univ Paris-Sud), M. Prost, S. Sauvage, R. Jakomin, G. Beaudoin, O. Mauguin, L. Largeau, I. Sagnes (CNRS), G. Ndong, M. Chaigneau,

R. Ossikovski (Ecole Polytechnique), and P. Boucaud (CNRS)

(E17-3141)5:05 PM

(Invited) Silicon Compatible High Performance Optical Interconnect371 Technology

B. Dutt (APIC Corporation)

(E17-3142)5:25 PM

Optical Characterization of Ge-on-Si Grown by using RTCVD381

T. Kim, Y. Kil, W. Hong, H. Yang, S. Kang, T. Jeong, and K. Shim (Chonbuk National University)

xvi

(E17-3143)5:45 PM

High Extinction Ratio, Low Energy Ge Quantum Well Electro-Absorption387 Modulator with 23 GHz Bandwidth

G. Isella (Politecnico di Milano), P. Chaisakul, D. Marris-Morini, M. Saïd Rouifed (Univ. Paris-Sud), D. Chrastina, J. Frigerio (L-NESS Dip. di Fisica - Politecnico di Milano), X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien (Univ. Paris-Sud)

Chapter 10 Poster Session

Tuesday 6:00 to 8:00 PM

(E17-3144) +Effects of HCl on the Growth of Epitaxial Ge395

D. L. Franca (Research Foundation of SUNY)

(E17-3145) Analysis of Local Electric Conductive Property for Si Nanowire Models399

Y. Ikeda, M. Senami, and A. Tachibana (Kyoto University)

(E17-3146)

Ge1-xSnx Alloys Pseudomorphically Grown on Ge (001) by Sputtering413

H. Pérez Ladrón de Guevara (Universidad de Guadalajara), Á. Rodríguez Vázquez, H. Navarro Contreras, and M. Vidal Borbolla (Universidad Autónoma de San Luís Potosí)

(E17-3147)

High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes419

C. I. Liao, T. Hsuan, C. Chien, M. Chan, C. Yang, J. Y. Wu (United Microelectronics Corp.), and B. Ramachandran (Applied Materials Inc.)

(E17-3148)

Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-425 Frequency Plasma

C. Wongwanitwattana, V. A. Shah, M. Myronov, E. H. Parker, T. E. Whall, and D. R. Leadley (University of Warwick)

(E17-3149)

Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-431 Rapid-Melting Process

R. Kato, M. Kurosawa, R. Matsumura, Y. Tojo, T. Sadoh, and M. Miyao (Kyushu University)

xvii

(E17-3150)

Direct Measurement of Silicon Strain Induced by Stressed TiNx Stripesn/a Through Raman

Z. Fu, X. Ma, H. Yin, J. Niu, J. Yan (Institute of Microelectronics of Chinese Academy of Sciences), and C. Zhao (Chinese Academy of Sciences)

(E17-3151)

Nano-Engineered Gexsi1-x -On Insulator for Heteroepitaxy437

K. Hossain (Amethyst Research Inc), M. C. Debnath, T. D. Mishima, M. B. Santos (University of Oklahoma), and O. W. Holland (Amethyst Research Inc)

(E17-3152)

NMOS SiP Epitaxy Process - Optimizing Facet Growth443

C. I. Liao, C. Chien, M. Chan, C. Yang, J. Y. Wu (United Microelectronics Corp.), C. Chung, and B. Ramachandran (Applied Materials Inc.)

(E17-3153)

Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer449 Insertion

A. Ohta, M. Matsui, H. Murakami, S. Higashi (Hiroshima University), and S. Miyazaki (Nagoya University)

(E17-3154)

Characterization of Resistance-Switching Properties of SiOx Films Using Pt459 Nanodots Electrodes

K. Makihara, M. Fukushima (Nagoya University), A. Ohta, M. Ikeda (Hiroshima University), and S. Miyazaki (Nagoya University)

(E17-3155)

X-ray and Raman Characterization of Strained SiGe Layers Treated by Stain465 Etching

W. Zhou, R. Liang, and L. Yan (Tsinghua National Laboratory for Information, Institute of Microelectronics, Tsinghua University)

(E17-3156)

Ge-on-Si Bufferless Epitaxial Growth for Photonic Devices469

R. E. Camacho-Aguilera, Y. Cai, L. C. Kimerling, and J. Michel (Massachusetts Institute of Technology)

(E17-3157)

Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced475 Layer-Exchange Crystallization at Low Temperature

J. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh (Kyushu University)

xviii

(E17-3158)

Impedance Spectroscopy of GeSn-based Heterostructures481

B. Baert (University of Liege), O. Nakatsuka, S. Zaima (Nagoya University), and N. Nguyen (University of Liege)

(E17-3159)

Improvements in Atomic Layer Deposition Nucleation on Ge(100) andn/a SiGe(100) via HOOH dosing

T. Kaufman-Osborn, J. Lee, K. Kiantaj, and A. Kummel (University of California, San Diego)

(E17-3160)

Orientation Dependence of Si1-xCx:P Growth and the Impact on FinFET491 Structures

J. Tolle, K. D. Weeks, M. Bauer (ASM America), V. Machkaoutsan, J. Maes (ASM Belgium), M. Togo, S. Brus, A. Hikavyy, and R. Loo (imec)

(E17-3161)

High Throughput Selective Epitaxial Growth of In Situ Doped SiCP/SiP499 Layers for NMOS Devices Using a Si3H8/SiH3CH3/PH3/Cl2 Based Cyclic Deposition and Etch Process

M. Bauer (ASM America)

(E17-3162)

Ge-on-Si: Single-Crystal Selective Epitaxial Growth in a CVD Reactor507

A. Sammak, W. De Boer, and L. K. Nanver (Delft University of Technology)

(E17-3163)

The Structural and Electrical Properties in CeO2 Dielectric on Ge Substraten/a for MOS Capacitors by Atomic Layer Deposition with Ce(iprCp)3

I. Oh, M. Kim, J. Park (Yonsei University), J. Gatineaub, K. Changhee (K.K. Air Liquide Laboratories), and H. Kim (Yonsei University)

(E17-3164)

Point-of-Use Sampling and Organic Impurity Analysis for Bulk Gases in513 Semiconductor Processing

J. Park, S. Shin, Y. Lee, P. Jun, and J. Kim (Samsung Electronics Co.,Ltd)

(E17-3165)

Electronic Band Structure and Effective Masses of Ge1-xSnx Alloys519

K. Low, Y. Yang, G. Han (National University of Singapore), W. Fan (Nanyang Technological University), and Y. Yeo

(National University of Singapore)

xix

(E17-3166)

Multi-Wavelength High Resolution Micro-Raman and Optical Reflectancen/a Characterization of Nano-Scale Strained Silicon-on-Insulator Substrates T. Kim, T. Shim (Hanyang University), W. Yoo (WaferMasters, Inc.),

and J. Park (Hanyang University)

(E17-3167)

Theoretical Calculation of Defects Formation Under Thermal Equilibrium inn/a Heavily n-type Doped Germanium

K. Takinai, Y. Ishikawa, and K. Wada (The University of Tokyo)

(E17-3168)

Strain Engineering in GeSnSi Materials527

H. H. Radamson, M. Noroozi, A. Jamshidi (Royal Institute of Technology (KTH)), P. E. Thompson (Naval Research Laboratory), and M. Östling (Royal Institute of Technology (KTH))

(E17-3169)

Optimization of SiC:P Raised Source Drain Epitaxy for Planar 20nm Fully533 Depleted SOI MOSFET Structures

N. Loubet (STMicroelectronics), T. Nagumo (Renesas), T. Adam (IBM), Q. Liu (STMicroelectronics), M. Raymond (GLOBALFOUNDRIES),

K. Cheng, A. Khakifirooz, Z. Zhu (IBM), P. Khare (STMicroelectronics), V. K. Paruchuri (IBM Research), B. Doris (IBM), and R. Sampson (STMicroelectronics)

(E17-3170)

Effect of B+ Flux on the Electrical Activation of Ultra-Shallow B+ Implants in543 Ge

B. R. Yates, B. L. Darby (University of Florida), D. H. Petersen, O. Hansen (Technical University of Denmark), R. Lin, P. F. Nielsen (CAPRES A/S), B. L. Doyle (Sandia National Laboratory), A. Kontos (Applied Materials), and K. S. Jones (University of Florida)

(E17-3171) Strain Evolution of Si1-xGex Selective Epitaxial Growth in Steps551

S. Koo, S. Kim, and D. Ko (Yonsei University)

(E17-3172)

Formation of Silicene and 2D Si Sheets on Ag(111): Growth Mode,n/a Structural and Electronic Properties

P. Vogt, T. Bruhn (TU-Berlin), A. Resta (CNRS-CINaM), B. Ealet (Aix-Marseille University), P. De Padova (CNR-ISM), and G. Le Lay (Aix-Marseille University)

xx

(E17-3173)

Investigations on GeO Disproportionation Using X-ray Photoelectron557 Spectroscopy

S. Wang (Institute of Microelectronics, Chinese Academy of Sciences), H. Liu (Chinese Academy of Sciences), T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi (The University of Tokyo)

(E17-3174)

Oxidation and Sulfidation of Germanium Surfaces: A Comparative Atomic569 Level Study of Different Passivation Schemes

C. Fleischmann, K. Schouteden (KU Leuven), M. Houssa (University of Leuven), S. Sioncke, C. Merckling, M. Meuris (imec), P. Hönicke, M. Müller, B. Beckhoff (Physikalisch-Technische Bundesanstalt), C. Van Haesendonck, K. Temst, and A. Vantomme (KU Leuven)

Chapter 11 GeSn Session 1: GeSn Photonics

Wednesday AM Session Co-Chairs:B. Vincent and G. Masini

(E17-3175)8:00 AM (Invited) GeSn Photodetection and Electroluminescence Devices on Si583

M. Oehme, E. Kasper, and J. Schulze (University of Stuttgart)

(E17-3176)8:30 AM

High Performance Group IV Photodiodes with Tunable Absorption Edges591 based on Ternary SiGeSn Alloys

R. T. Beeler, J. Menéndez, D. J. Smith, and J. Kouvetakis (Arizona State University)

(E17-3177)8:50 AM

(Invited) MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic601 Devices

J. S. Harris, H. Lin, R. Chen, Y. Huo, E. Fei, S. Paik, S. Cho, and T. Kamins (Stanford University)

xxi

Chapter 12 Epitaxy Session 2: New Materials

Wednesday AM Session Co-Chairs:Y. Kim and M. Sakuraba

(E17-3178)8:00 AM

(Invited) Beyond Graphene: Synthesis of Epitaxial Silicene Sheets609 G. Le Lay (Aix-Marseille University), P. De Padova (CNR-ISM), A. Resta (CNRS-CINaM), T. Bruhn, and P. Vogt (TU-Berlin)

(E17-3179)8:30 AM

(Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration613 of New Materials on 300 mm Silicon Wafers

G. Kozlowski, O. Fursenko, P. Zaumseil, T. Schroeder (IHP), M. Vorderwestner, and P. Storck (Siltronic AG)

(E17-3180)9:00 AM

Nano-Synthesis Approach to the Fabrication of Monocrystalline Silicon-like623 (III-V)yIV5-2y Semiconductors

A. V. Chizmeshya, J. Kouvetakis, G. Grzybowski, R. T. Beeler, and J. Menéndez (Arizona State University)

(E17-3181)9:20 AM

(Invited) Undoped Ge Core-Si(Ge) Shell Nanowires: Synthesis, Local635 Composition and Strain Characterization

S. Hu, I. A. Goldthorpe, A. F. Marshall, and P. C. McIntyre (Stanford University)

Chapter 13 Emerging Applications Session 1: Quantum Effects / Spintronics

Wednesday AM Session Chair:T. Krishnamohan

(E17-3182)10:05 AM

(Invited) Spin Coherence in Si and Applications to Quantum Information647 Processing

S. A. Lyon, A. M. Tyryshkin, J. He, and R. M. Jock (Princeton University)

xxii

(E17-3183)10:35 AM

(Invited) Single-Shot Readout of Singlet-Triplet Qubit States in a Si/SiGe655 Double Quantum Dot

J. R. Prance, Z. Shi, C. B. Simmons, D. E. Savage, M. G. Lagally (University of Wisconsin-Madison), L. R. Schreiber, L. M. Vandersypen (Kavli Institute of Nanoscience, TU Delft), M. Friesen, R. Joynt, S. N. Coppersmith, and M. A. Eriksson (University of Wisconsin-Madison)

(E17-3184)11:05 AM

A Design Scheme for Topological Insulators Based Bonds, Bands, Symmetry663 and Spin Orbit Coupling

C. Felser, L. Müchler, S. Chadov (Max Planck Institute Chemical Physics of Solids), G. Fecher, B. Yan (Johannes Gutenberg-Universität), J. Kübler (Max-Planck-Institut Chemische Physik fester Stoffe), H. Zhang, and S. Zhang (Stanford University)

(E17-3185)11:25 AM

Measurement and Control of Individual Electron Spins in Silicon MOS-basedn/a Quantum Dots

H. Jiang (UCLA)

Chapter 14 Surfaces and Interfaces Session 2: Nanowires and New Materials

Wednesday AM Session Co-Chairs:S. Miyazaki and P. McIntyre

(E17-3186)10:05 AM

(Invited) Non Planar Non Si CMOS - Challenges and Opportunities669 C. Hobbs, K. Ang, R. Hill (SEMATECH), I. Ok (IBM), B. Min (SEMATECH), D. L. Franca (Research Foundation of SUNY), H. Stamper, S. Vivekanand, M. Rodgers, S. Gausepohl (CNSE),

P. Kirsch, and R. Jammy (SEMATECH)

(E17-3187)10:35 AM

Phonon Dispersion in <100> Si Nanowire Covered with SiO2 Film673 Calculated by Molecular Dynamics Simulation

T. Watanabe, T. Zushi, M. Tomita, R. Kuriyama, N. Aoki, and T. Kamioka (Waseda University)

xxiii

(E17-3188)10:55 AM

(Invited) Electron Transport and Strain Mapping in Ge-SixGe1-x Core-Shell681 Nanowire Heterostructres

D. C. Dillen (The University of Texas at Austin), J. Nah (Chungnam National University), K. M. Varahramyan, S. K. Banerjee, and E. Tutuc (The University of Texas at Austin)

(E17-3189)11:25 AM

Liquid-Phase Deposition of Thin Si and Ge Films Based on Ballistic Electro-691 reduction

T. Ohta, R. Mentek (Tokyo Univ. of A & T), B. Gelloz (Nagoya University), N. Mori (Osaka Univ.), and N. Koshida (Tokyo University of Agriculture and Technology)

(E17-3190)11:45 AM

Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation699 Through Al2O3

R. Zhang, P. Huang, J. Lin, M. Takenaka, and S. Takagi (The University of Tokyo)

Chapter 15 Processing Session 2: Germanium and Nanoscaled Devices

Wednesday PM Session Co-Chairs:H. W. Kennel and J. Murota

(E17-3191)1:40 PM

(Invited) GOI Substrates: Fabrication and Characterization709 A. Sakai, S. Yamasaka, J. Kikkawa, S. Takeuchi, Y. Nakamura (Osaka University), Y. Moriyama, T. Tezuka (GNC, AIST), and K. Izunome (Covalent Silicon Corp.)

(E17-3192)2:10 PM

(Invited) Strained Nanoscaled Devices727 D. Grützmacher, Q. Zhao, S. Richter, L. Knoll, J. Moers, J. Gerharz, G. Mussler, D. Buca, and S. Mantl (Forschungszentrum Jülich)

(E17-3193)2:40 PM

Effect of Two-step Oxidation in Ge Condensation on Surface Roughnessn/a Property of Relaxed SiGe layer-on-insulator Substrates

T. Shim, T. Kim, D. Lee (Hanyang University), R. Okuyama (SUMCO Corporation), and J. Park (Hanyang University)

xxiv

(E17-3194)3:00 PM

Electrical Isolation of Dislocations in Ge Layers on Si(001) Substrates737 through CMOS Compatible Suspended Structures

V. A. Shah, M. Myronov, C. Wongwanitwatana, M. Prest, J. S. Richardson-Bullock, E. H. Parker, T. E. Whall, and D. R. Leadley (University of Warwick)

(E17-3195)3:20 PM

Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-747 Melting-Growth

R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao (Kyushu University)

(E17-3196)3:40 PM

Modeling Two Dimensional Solid Phase Epitaxial Growth for Patterned Ge753 Substrates

B. L. Darby, B. R. Yates, A. Kumar (University of Florida), A. Kontos (Applied Materials), R. G. Elliman (Australian National University), and K. S. Jones (University of Florida)

Chapter 16 Optoelectronics Session 3: Receivers, Emitters, and Interconnects

Wednesday PM Session Chair:G. Masini

(E17-3197)1:40 PM

(Invited) Germanium/Silicon Heterostructures for Terahertz Emission763 R. W. Kelsall, V. Dinh, P. Ivanov, A. Valavanis, L. J. Lever, Z. Ikonic (University of Leeds), P. Velha, D. Dumas, K. F. Gallacher, D. J. Paul (University of Glasgow), J. Halpin, M. Myrnov, and D. R. Leadley

(University of Warwick)

(E17-3198)2:10 PM

(Invited) Ge Photodiodes for CMOS Photonics Optical Engines and773 Interconnects

S. Sahni and G. Masini (Luxtera)

xxv

(E17-3199)2:40 PM

Long Wavelength ≥1.9 μm Germanium for Optoelectronics Using Process779 Induced Strain

P. Velha, K. F. Gallacher, D. C. Dumas, D. J. Paul (University of Glasgow), M. Myronov, and

D. R. Leadley (University of Warwick)

(E17-3200)3:00 PM

Fabrication of Ge-on-Si Substrates for the Integration of High-Quality GaAs783 Nanostructures on Si

S. Bietti (Universita' degli Studi di Milano-Bicocca), S. Cecchi (Politecnico di Milano), C. Frigeri (CNR-IMEM Parma), E. Grilli (Università di Milano Bicocca), A. Fedorov (IFN-CNR), A. Vinattieri, M. Gurioli (Universita' di Firenze), G. Isella (Politecnico di Milano), and S. Sanguinetti (Universita' degli Studi di Milano-Bicocca)

(E17-3201)3:20 PM Advanced Ge-on-Si Telecommunication Receivers791

C. R. Doerr (ACACIA COMMUNICATIONS)

Chapter 17 Strain Session 1: Channels, Source/Drain, and GaN

Wednesday PM Session Chair:K. Uchida

(E17-3202)4:15 PM

(Invited) Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and797 Semipolar GaN by Dislocation Glide

E. C. Young and J. S. Speck (University of California Santa Barbara)

(E17-3203)4:45 PM

Channel Strain Evolution of Recessed Source/Drain Si1-xCx Structures by801 Modifying Scaling Factors

S. Kim, D. Byeon, M. Jung, D. Ko (Yonsei University), S. Chopra, Y. Kim (Applied Materials), and H. Lee (Sungkyunkwan University)

(E17-3204)5:05 PM

High Ge Content SiGe Selective Processes for Manufacturing Source/Drain807 in the Next Generations of pMOS Transistors

A. Hikavyy, W. Vanherle, L. Witters, B. Vincent, J. Dekoster, and R. Loo (imec)

xxvi

(E17-3205)5:25 PM

Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-815 Controlled with Selective Ion Implantation

K. Sawano, Y. Hoshi, S. Nagakura (Tokyo City University), K. Arimoto, K. Nakagawa (University of Yamanashi), N. Usami (Tohoku University), and Y. Shiraki (Tokyo City University)

Chapter 18 Emerging Applications Session 2: Quantum Effects / Spintronics

Wednesday PM Session Chair:T. Krishnamohan

(E17-3206)4:15 PM

(Invited) Coherent Manipulation of a Si/SiGe-based Singlet-Triplet Qubit823 E. T. Croke, M. G. Borselli, B. M. Maune, B. Huang, T. D. Ladd, P. W. Deelman, K. S. Holabird, A. A. Kiselev, I. Alvarado-Rodriguez, R. S. Ross, A. E. Schmitz, M. Sokolich, T. M. Hazard, M. F. Gyure, and

A. T. Hunter (HRL Laboratories LLC)

(E17-3207)4:45 PM

(Invited) Optical Spin Orientation in SiGe Heterostructures831 G. Isella, F. Bottegoni, S. Cecchi, A. Ferrari, F. Ciccacci (Politecnico di Milano), F. Pezzoli, A. Giorgioni, E. Gatti, E. Grilli, M. Guzzi (Università di Milano Bicocca), C. Lange, N. Köster,

R. Woscholski, S. Chatterjee (Philipps-Universitt Marburg), D. Trivedi, P. Li, Y. Song, and H. Dery (University of Rochester)

(E17-3208)5:15 PM

Enhancement-Mode Buried Strained Silicon Channel Double Quantum Dot837 with Integrated Electrometer

T. Lu (Sandia National Labs), N. Bishop, T. Pluym, P. Kotula, M. Lilly, and M. Carroll (Sandia National Laboratories)

(E17-3209)5:35 PM Local Quantity Analysis of Nanosize Electronics and Spintronics Material843

M. Senami and A. Tachibana (Kyoto University)

xxvii

Thursday AM Session Chair:B. Vincent

(E17-3211)8:00 AM

Reception and Workshop on Next Generation Devices

Wednesday PM Session Co-Chairs:K. Saraswat and D. Harame

see page vii for more details

7:00 PM Reception

(E17-3210)7:30 PM

Panel Discussion: How Far Can We Push Si CMOS and What are the Alternatives for Future ULSI

9:00 to 9:30 PM

Speakers

T. Ning (IBM), S. Takaga (University of Tokyo), W. Maszara (Global Foundries), C. Claeys (imec), K. Uchida (Keio University), P. Gargini (Intel)

Chapter 19 GeSn Session 2: GeSn Epitaxy

(Invited) Ge1-xSnx Materials: Challenges and Applications853 R. Loo, B. Vincent, F. Gencarelli, C. Merckling, A. Kumar, G. Eneman, L. Witters, W. Vandervorst, M. Caymax, M. Heyns, and A. Thean (imec)

(E17-3212)8:30 AM

GeSn Alloys on Si Using Deuterated Stannane and Trigermane: Synthesis865 and Properties

G. Grzybowski, R. T. Beeler, L. Jiang, D. J. Smith, A. V. Chizmeshya, J. Kouvetakis, and J. Menéndez (Arizona State University)

(E17-3213)8:50 AM

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown875 GeSn

F. Gencarelli, B. Vincent (imec), J. Demeulemeester, A. Vantomme (KU Leuven), A. Moussa, A. Franquet, A. Kumar, H. Bender, J. Meersschaut, W. Vandervorst, R. Loo, M. Caymax (imec), K. Temst (KU Leuven), and M. Heyns (imec)

xxviii

(E17-3214)9:10 AM

Epitaxial Growth of Ge1-xSnx by Reduced Pressure CVD Using SnCl4 and885 Ge2H6

S. Wirths, D. Buca, A. Tiedemann, B. Holländer, P. Bernardy, T. Stoica, D. Grützmacher, and S. Mantl (Forschungszentrum Jülich)

(E17-3215)9:30 AM

Thermal Chemical Vapor Deposition of Epitaxial Germanium Tin Alloysn/a

Y. Huang, C. Wang, M. Jin, E. Sanchez, and Y. Kim (Applied Materials, Inc.)

Thursday AM Session Chair:B. Vincent

(E17-3216)10:05 AM

Chapter 20 GeSn Session 3: GeSn Epitaxy

(Invited) Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a897 High Sn Content

S. Zaima, O. Nakatsuka, M. Nakamura (Nagoya University), W. Takeuchi, Y. Shimura, and N. Taoka (Nagoya University)

(E17-3217)10:35 AM

Growth of Ge1-xSnx Alloys Using Combined Sources of Solid Tin and903 Gaseous Germane

S. Su, B. Cheng, D. Zhang, G. Zhang, C. Xue, and Q. Wang (Institute of Semiconductors, Chinese Academy of Sciences)

(E17-3218)10:55 AM

Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary907 Alloy

T. Yamaha, O. Nakatsuka (Nagoya University), S. Takeuchi (Covalent Silicon Corp.), W. Takeuchi, N. Taoka (Nagoya University), K. Araki (Covalent Materials Co.), K. Izunome (Covalent Silicon Corp.), and S. Zaima (Nagoya University)

(E17-3219)11:15 AM

Single Crystalline GeSn on Silicon by Solid Phase Crystallization915

R. R. Lieten, S. Decoster, M. Menghini, J. Seo, A. Vantomme, and J. Locquet (KU Leuven)

xxix

(E17-3220)11:35 AM Tin Deuteride (SnD4) Stabilization921

R. F. Spohn and C. B. Richenberg (Praxair, Inc.)

Chapter 21 GeSn Session 4: GeSn FET

Thursday PM Session Co-Chairs:B. Vincent and Y.-C. Yeo

(E17-3221)1:10 PM

(Invited) Tin-Incorporated Source/Drain and Channel Materials for Field-931 Effect Transistors

Y. Yeo, G. Han, X. Gong, L. Wang, W. Wang, Y. Yang, P. Guo, B. Liu (National University of Singapore (NUS)), S. Su, G. Zhang, C. Xue (Institute of Semiconductors, Chinese Academy of Sciences), and B. Cheng (State Key Laboratory on Integrated Optoelectronics)

(E17-3222)1:40 PM

(Invited) GeSn Channel n and p MOSFETs937 S. Gupta, R. Chen (Stanford University), B. Vincent, D. Lin (imec), B. Magyari-Kope (Stanford University), M. Caymax, J. Dekoster (imec), J. S. Harris, Y. Nishi, and K. C. Saraswat (Stanford University)

(E17-3223)2:10 PM

High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET943 Fabricated on (111) Substrate

G. Han (National University of Singapore (NUS)), S. Su (Institute of Semiconductors, Chinese Academy of Sciences), Y. Yang, P. Guo, X. Gong, L. Wang, W. Wang, C. Guo (National University of Singapore (NUS)), G. Zhang, C. Xue, B. Cheng (Institute of Semiconductors, Chinese Academy of Sciences), and Y. Yeo (National University of Singapore (NUS))

(E17-3224)2:30 PM

Fabrication and Negative Bias Temperature Instability (NBTI) Study on949 Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation and HfO2 High-k and TaN Metal Gate

X. Gong (National University of Singapore (NUS)), S. Su (Institute of Semiconductors, Chinese Academy of Sciences), B. Liu, L. Wang, W. Wang, Y. Yang, R. Cheng, E. Kong (National University of Singapore (NUS)), B. Cheng (Institute of Semiconductors, Chinese Academy of Sciences), G. Han, and Y. Yeo (National University of Singapore (NUS))

xxx

Chapter 22 Emerging Applications Session 3: Novel Devices and Memories

Thursday PM Session Chair:T. Krishnamohan

(E17-3225)3:05 PM

Si/SiGe Thermoelectric Generators959

D. J. Paul, A. Samarelli, L. Ferre Llin, Y. Zhang, J. M. Weaver, P. S. Dobson (University of Glasgow), S. Cecchi (Politecnico di Milano), J. Frigerio, F. Isa (L-NESS, Politecnico di Milano), D. Chrastina (L-NESS Dip. di Fisica - Politecnico di Milano), G. Isella (Politecnico di Milano), T. Etzelstorfer, J. Stangl (Johannes Kepler Universität), and E. Müller Gubler (ETH Zurich)

(E17-3226)3:25 PM

SiGe Band-to-Band Tunneling Calibration based on p-i-n Diodes:965 Fabrication, Measurement and Simulation

K. Kao, A. Verhulst, R. Rooyackers, A. Hikavyy, E. Simoen, K. Arstila, B. Douhard, R. Loo, A. M. Simoen (imec), J. Tolle (ASM America), H. Dekkers (imec), V. Machkaoutsan, J. Maes (ASM Belgium), K. De Meyer, N. Collaert, M. Heyns, C. Huyghebaert, and

A. Thean (imec)

(E17-3227)3:45 PM

Tunneling Field-Effect Transistor (TFET) with Novel Ge/In0.53Ga0.47As971 Tunneling Junction

P. Guo, Y. Yang (National University of Singapore), Y. Cheng (Institute of Materials Research and Engineering), G. Han (National University of Singapore), C. Chia (Institute of Materials Research and Engineering), and Y. Yeo (National University of Singapore)

(E17-3228)4:05 PM

Germanium Tin Tunneling Field Effect Transistor for Sub-0.4 V Operation979

Y. Yang, K. Low, P. Guo, W. Wang, G. Han, and Y. Yeo (National University of Singapore)

(E17-3229)4:25 PM Si/SiGe Tunneling Static Random Access Memories987

G. Ternent and D. J. Paul (University of Glasgow)

(E17-3230)4:45 PM

Ge Surface-Energy-Driven Secondary Grain Growth for Vertical Channel in991 3D NAND Flash Memories

S. Lee, Y. Son, and E. Yoon (Seoul National University)

xxxi

Chapter 23 Epitaxy Session 3: In Situ Doping of Si, SiGe, and Ge Epilayers

Thursday PM Session Co-Chairs:R. Loo and B. Tillack

(E17-3231)3:05 PM

Epitaxial Growth and Applications of Low-Resistivity Phosphorous-Dopedn/a

Si1-xCx

T. N. Adam (University at Albany), N. Loubet (STMicroelectronics), A. Reznicek, V. Paruchuri (IBM Research), R. Sampson (STMicroelectronics), and D. Sadana (IBM Research)

(E17-3232)3:35 PM

Selective Epitaxial Growth of Heavily Boron-Doped Silicon with Uniform999 Doping Depth Profile

Z. Zhu, Z. Cong, and B. Ramachandran (Applied Materials Inc.)

(E17-3233)3:55 PM

High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for1007 nMOS Applications

Z. Ye, S. Chopra, R. Lapena, Y. Kim, and S. Kuppurao (Applied Materials)

(E17-3234)4:15 PM

(Invited) Microstructure Development in Epitaxially Grown In Situ Boron1013 and Carbon Co-Doped Strained 60% Silicon-Germanium Layers

A. Reznicek (IBM Research), T. N. Adam (University at Albany), J. Li, Z. Zhu, R. Murphy (IBM Semiconductor Research and Development Center), S. W. Bedell, V. Paruchuri, and D. K. Sadana (IBM T.J. Watson Research Center)

(E17-3235)4:35 PM

In Situ Boron (B) Doped Germanium (Ge:B) Grown on (100), (110), and1025 (111) Silicon: Crystal Orientation and B Incorporation Effects

G. Han, Q. Zhou, P. Guo, W. Wang, Y. Yang, and Y. Yeo (National University of Singapore)

xxxii

Chapter 24 Related Compounds Session 1: Heterogeneous Integration

Friday AM Session Chair:A. Reznicek

(E17-3236)8:00 AM

(Invited) Materials Integration for III-V/SiGe+CMOS Integrated Circuit1033 Platforms

E. A. Fitzgerald (Massachusetts Institute of Technology)

(E17-3237)8:30 AM

(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a1039 Silicon Substrate

T. E. Kazior (Raytheon), J. LaRoche, and W. Hoke (Raytheon Integrated Defense Systems)

(E17-3238)9:00 AM

(Invited) Heterogeneous Integration of InP HBTs on CMOS: Leveraging and1047 Providing Value to Conventional Silicon Technologies

J. C. Li, Y. Royter, P. Patterson, T. Hussain, J. R. Duvall, M. C. Montes, I. Valles, F. Ku, M. F. Boag-O'Brien, A. Lopez, D. Le, D. Zehnder, S. Kim, S. T. Chen, T. Oh, M. Akmal, E. F. Wang, D. A. Hitko, M. Sokolich, D. H. Chow, P. D. Brewer, and K. R. Elliott (HRL Laboratories LLC)

(E17-3239)9:30 AM

(Invited) Hybrid Wafer Bonding and Heterogeneous Integration of GaN1055 HEMTs and Si (100) MOSFETs

H. Lee, Z. Li, M. Sun, K. Ryu, and T. Palacios (Massachusetts Institute of Technology)

Chapter 25 Related Compounds Session 2: Processing

Friday AM Session Chair:A. Reznicek

(E17-3240)10:15 AM

(Invited) Scalable GaN-on-Silicon Using Rare Earth Oxide Buffer Layers1065 F. Arkun, M. Lebby, R. Dargis, R. Roucka, R. S. Smith, and A. Clark (Translucent Inc.)

xxxiii

(E17-3241)10:45 AM

Formation and Characterization of Nickel Germanosilicide on1073 Si1-xGex/Si/SiO2/Si

W. Yoo (WaferMasters, Inc.), N. Hasuike, H. Harima, and M. Yoshimoto (Kyoto Institute of Technology)

(E17-3242)11:05 AM

Low Specific Ohmic Contacts to n-type Germanium Using a Low1081 Temperature NiGe Process

K. F. Gallacher, P. Velha, D. J. Paul, I. Maclaren (University of Glasgow), M. Myronov, and D. R. Leadly (University of Warwick)

(E17-3243)11:25 AM

Formation of 1.7-nm-thick-EOT Germanium Dioxide Film with a High-1085 Quality Interface Using a Direct Neutral Beam Oxidation Process

A. Wada (Tohoku University), R. Zhang, S. Takagi (The University of Tokyo), and S. Samukawa (Tohoku University)

Author Index