Day	Time	Session	Presenter	Title
9/30 (Sun)	8:30 AM	Optoelectronics 1	Witzens, Jeremy	(Invited) Design and Modeling of Sigesn Lasers: From Modeling Experiments to Future Device Concepts
			Nam, Donguk	(Invited) Strain-Engineered Low-Threshold Group IV Lasers for Photonic-Integrated Circuits
			Ishikawa, Yasuhiko	Silicon-Germanium Stressors for Germanium Photonic Devices on Silicon
			Mathews, Jay	Amplified Spontaneous Emission from Gesn Waveguides at Room Temperature
	10:30 AM	FET 1	Czornomaz, Lukas	(Invited) Hybrid III-V/Si CMOS Technology Platform: From Materials for Logic to Integrated RF and Photonics
			Huang, Yi-Chiau	(Invited) Epitaxial Germanium and Germanium Tin Alloys By Thermal Chemical Vapor Deposition
			Kerdilès, Sébastien	Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing
			Chen, Qing	(Invited) InAs Nanowire Field Effect Transistors with Partial Gate
	2:00 PM	Optoelectronics 2	Fujikata, Junichi	(Invited) High-Performance Si Optical Modulator and Ge Photodetector and Their Application to Silicon Photonics Integrated Circuit
			Brehm, Moritz	(Invited) Defect Engineering in Ge QDs for Light Emission in Si Photonics
			Cheng, Buwen	Low Dark Current Ge/Si Photodetector Grown By Selective Epitaxial Growth
			Schwarz, Daniel	MBE-Grown SixGe1-x-ySny Diode and Quantum Well Diode Structures with High Sn Content for Optical Applications
	4:00 PM	FET 2	Teherani, James	(Invited) Orientation Dependence of the Hole Ballistic Velocity in Si, Sige, and Ge Thin-Body Structures with Uniaxial Compressive Strain
			Hashemi, Pouya	(Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium Finfets with High Ge Content
			Komago, Shota	Strain Evaluation of Laser-Annealed Silicon Germanium Thin Layers
			Žurauskaitė, Laura	Investigation of Tm2O3 As a Gate Dielectric for Ge MOS Devices
10/01 (Mon)	8:00 AM	Optoelectronics 3	Yu, Shui-Qing	(Invited) Development of Si-Based Sigesn Technique Towards Short-Wave and Mid-Infrared Applications
			Hiraki, Tatsurou	(Invited) Heterogeneous Integration of III-V Semiconductors on Si Photonics Platform
			Abedin, Ahmad	IR-Photodetector Fabrication on Suspended Gesn Thin Layers
			Assali, Simone	Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors
	10:00 AM	G03 Plenary	Maszara, Witold	(Keynote) Contemporary and Future Logic Devices
			Liu, Tsu-Jae	(Keynote) Silicon-Germanium: Enabler of Moore's Law
	1:00 PM	Related Compounds	Bacher, Gerd	(Invited) 2D Materials for Electronic and Optoelectronic Applications: Growth and Device Integration
			Bol, Ageeth	(Invited) Atomic Layer Deposition for the Synthesis and Integration of 2D Materials for Nanoelectronics
			Chiappe, Daniele	(Invited) Scalable, Layer-Controlled Synthesis of 2D Semiconductors
	2:40 PM	Emerging Applications	Mukherjee, Manas	(Invited) Ion Trap Quantum Computing - a New Computing Regime
			Bottoms, Bill	(Invited) Heterogeneous Integration Maintaining the Pace of Progress as Moore’s Law Slows
			Fitzgerald, Eugene	(Invited) The New Silicon Industry: Silicon CMOS ASICs Incorporating Compound Semiconductors
	6:00 PM	G03 Poster Session	Cai, Yuanyuan	Propertities of Modes of Compound Cavity in Quasicrystal Under Low Index-Contrast
			Li, Zairui	Optical Pumped Gesn Waveguides Room Temperature Amplified Spontaneous Emission Observation
			Feng, Shuai	Multiple-Parameter-Detected Silicon-Based Photonic Crystal Biosensor Based on Defect-Mode Coupling
			Pan, Jiaoqing	Selective Area Growth of InGaAs/InP Quantum Well Nanowires on SOI Substrate
			Pan, Jiaoqing	Improving the Performance of the Optical Antenna for Integrated LIDAR with Optical Phased Arrays through High Contrast Grating Structure on SOI Substrate
			Goyal, Chandra	Fabrication of Homogeneous Ultra-Thin Sige-on-Insulator Layer for Thermoelectric Applications
			Makihara, Katsunori	High Density Formation and Magnetoelectronic Transport Properties of Fe3si Nanodots
			Zuo, Yuhua	Reliability of Silicon Avalanche Photodetector in Geiger Mode
			Choi, Chel-Jong	Metal-Semiconductor-Metal Photodetector with Interdigitated Graphene Finger Electrodes Fabricated on Ge Epilayer Grown on Si Substrate
10/02 (Tue)	8:30 AM	FET 3	Takagi, Shinichi	(Invited) Ultrathin-Body Ge-on-Insulator Mosfet and TFET Technologies
			Liu, Chee Wee	(Invited) Ge/GeSn Processes and Transistor Applications
			Lee, Byoungseok	Effect of Si/Sige Buried Gate with Strained Layers on N-Type Channel Properties
			Yokogawa, Ryo	Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated By Rapid Melting Growth
	10:30 AM	HBT	Donkers, Johan	(Invited) Bicmos Technology Optimization for Millimeter Wave Applications
			Niu, G.	(Invited) Physics and Compact Modeling of Sige HBT Linearity
			Li, Yiao	Improved Modeling of High Injection Substrate Current in High Voltage Bipolar Transistors
			Dongmo, Pernell	Selective Silicon for Raised Extrinsic Base in PA Applications
	2:00 PM	Epitaxy 1	Loo, Roger	(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in Finfet, Stacked Nanowires and Monolithic 3D Integration
			Mazzocchi, Vincent	Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, Sige and Sigeb
			Margetis, Joe	Trimethylgallium and Triethylgallium for Doping of Sige and Ge Epitaxial Layers
			Hemkar, Manish	(Invited) Enabling Low Temperature and High Quality Epitaxial Films for Current and Future Nodes
	4:00 PM	Surfaces and Interfaces 1	Pi, Xiaodong	(Invited) High-Performance Optoelectronic Devices Based on Silicon Nanocrystals
			Miyazaki, Tsuyoshi	(Invited) Large-Scale DFT Study of Ge/Si 3D Nanoislands and Core-Shell Nanowires
			Yu, Linwei	In-Plane Solid-Liquid-Solid Growth and Engineering of Si and Si/Ge Nanowires for Integratable High Performance Fin-like Thin Film Transistors
			Watanabe, Heiji	Highly n-Type Doped Ge and Gesn Wires Fabricated By Lateral Liquid-Phase Epitaxy
	7:00 PM	Evening Panel Workshop	0	Panel Discussion
10/03 (Wed)	8:30 AM	Strain Engineering	Nuytten, Thomas	(Invited) Raman Stress Measurements at the Nanoscale
			Kurosawa, Masashi	(Invited) Composition and Strain Engineering of New Group-IV Thermoelectric Materials
			Takahashi, Yuki	Evaluation of Anisotropic Three-Dimensional Strain Relaxation in Stripe-Shaped Ge1-XSnx Mesa Structure
			Tomita, Motohiro	Relationship between Phonon and Thermal Properties of Group IV Studied By Molecular Dynamics Simulation
	10:30 AM	Processing	Gity, Farzan	(Invited) Full Wafer CMOS-Compatible Integration of Ge with Si By Direct Wafer Bonding
			Li, Chuanbo	The Growth of GeSn Layer on Patterned Si Substrate by MBE Method
			Higashi, Seiichiro	Melting and Crystallization of Amorphous Germanium Films on Insulating Substrate By Atmospheric Pressure Micro-Thermal-Plasma-Jet
			Borland, John	Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
			Baristiran Kaynak, Canan	(Invited) Si(1-x)Gex/Si Mqw Based Uncooled Microbolometer Development and Integration into 130nm Bicmos Technology
	2:00 PM	Metrology	Liao, Szuya	(Invited) Advanced CMOS Scaling: Challenges, Metrology and Characterization Needs
			Wormington, Matthew	(Invited) High-Resolution X-Ray Diffraction Characterization and Metrology for Advanced Logic
			Schulze, Andreas	Ascertaining the Nature and Distribution of Extended Crystalline Defects in Emerging Semiconductor Materials Using Electron Channeling Experiments
			De Wolf, Ingrid	(Invited) Determining Composition and Strain in Sige Alloys Using Raman Spectroscopy: An Unfinished Story
	4:10 PM	Epitaxy 2	von den Driesch, Nils	(Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys Towards Heterostructure Light Emitters
			Aydin, Ömür	Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology
			Khazaka, Rami	Investigation of the Growth of SiGeSn Pseudomorphic Layers on 200 Mm Ge Virtual Substrate
			Hamaya, Kohei	(Invited) Low-Resistance Ferromagnet/Germanium Schottky-Tunnel Contacts for Spintronic Applications
10/04 (Thu)	8:00 AM	Epitaxy 3	Loubet, Nicolas	(Invited) Epitaxy of (SiGe/Si) Superlattices for the Fabrication of Horizontal Gate-All-Around Nanosheet Transistors
			Hartmann, Jean-Michel	A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and Sige
			Mukherjee, Samik	Atomistic and Optical Properties of Group IV Ultrathin Superlattices
			Charles, Matthew	(Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs
	10:00 AM	Surfaces and Interfaces 2	Bakkers, Erik	(Invited) Light Emission from Group IV Semiconductors
			Kummel, Andrew	(Invited) Engineering Low Defect Density Siox Interfaces on Sige
			Nakayama, Takashi	Physics of Fermi-Level “Unpinning” at Metal/Ge Interfaces; First-Principles View
			Quintero, Andrea	Characterization of the Morphological, Electrical and Phase Sequence Evolution of Ni- and Ni0.9Pt0.1-Ge0.9Sn0.1 Metal Contacts during Solid-State Reaction
	1:20 PM	Epitaxy 4	Moutanabbir, Oussama	(Invited) Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies
			Mastari, Marouane	Nano-Heteroepitaxy: An Investigation of Sige Nano-Pillars Coalescence
			Yamamoto, Yuji	Self-Ordered Ge Nanodot Fabrication By Reduced Pressure Chemical Vapor Deposition
			Scappucci, Giordano	(Invited) Epitaxy and Applications of Group-IV Semiconductors in Quantum Computing
	3:10 PM	Joint Session: Strain & Metrology & Characterization	Usuda, Koji	(Invited) High Sn Concentration MOCVD Grown Strained Gesn Thin Film Evaluated Using Haxpes and XRD Base on Synchrotron Technique
			Bouthillier, Étienne	Decoupling Strain and Composition Effects on Ge1-YSny Lattice Vibrations
			Moutanabbir, Oussama	Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry
			Yoshioka, Kazutoshi	Determination of Strain-Raman Shift Coefficient for Carbon-Doped Silicon
			Ito, Tomonori	An Interpretation for Defect-Induced Structural Transformation in SiC