State-of-the-art SiGe HBTs have achieved astonishing performance with ft and fmax exceeding 400-500 GHz. However, such devices also have their scaling limitations, usually require rather costly integration schemes with CMOS backbone technology, and it is difficult to implement transistors with different breakdown voltages in the same fabrication process. One way to overcome those limitations could be the use of Lateral Bipolar Transistors (LBTs). The technology and characteristics of Horizontal Current Bipolar Transistor (HCBT) will be presented examining its compact structure with low volume of parasitic regions, with a low-cost integration scheme with CMOS and with the flexibility of adjusting breakdown voltage from few volts to above 50 V. The potential for using HCBT and other LBT concepts for advanced SiGe HBTs will be discussed addressing fabrication feasibility, their electrical characteristics and scaling limitations.

Short Bio Tomislav Suligoj is a Professor at the University of Zagreb, Faculty of Electrical Engineering and Computing and a Head of the Micro and Nano Electronics Laboratory. He was a visiting Fulbright scholar at UCLA and postdoctoral fellow at Hong Kong University of Science and Technology. His research is focused on the design, fabrication, characterization and modeling of advanced electron devices and integrated circuit design. He led more than 20 projects where the novel record-breaking semiconductor device structures have been developed, such as, Horizontal Current Bipolar Transistor (HCBT), which has been the fastest implanted-base silicon bipolar transistor, High aspect-ratio FinFET, Vertical Silicon-on-Nothing FET; projects on the design and analysis of the advanced photodetectors with amorphous boron, InGaAs and Ge; and physical modeling of ultra-scaled MOS structures (Si, InGaAs, Ge), GaN HEMTs and 2D materials (graphene, phosphorene). He has co-authored more than 150 papers in the leading journals and conferences in the field and 20 patents. He has received 14 awards for his scientific contributions. He has been Device Physics Subcommittee Chair at BCTM / BCICTS conference and a member of Steering committee of MIPRO MEET conference and Program committee member MIEL conference.